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1 ZnTe 10 x 10 x 0.5 mm, (110), 2 sides polished 60/40, 3pcs.
2 ZnTe 10 x 8 x 0.8 mm, (110), 2 sides polished 60/40, 2pcs.
3 ZnTe 10 x 8 x 0.2 mm, (110), 2 sides polished 60/40, 1pc.
4. ZnTe 10 x 8 x 1 mm, (110), 2 sides polished 60/40, 2pcs.
5. ZnTe 10 x 10 x 0.4 mm, (110), 2 sides polished 60/40, 1pc.
Zinc telluride is the chemical compound with the formula ZnTe. This solid is an intrinsic semiconductor material with band gap of 2.23–2.25 eV. It is usually a P-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.
Applications
Its lattice constant is 0.61034 nm, allowing it to be grown with or on aluminium
antimonide, gallium antimonide, indium arsenide, and lead selenide. It has the
appearance of grey or brownish-red powder, or ruby-red crystals when refined by
sublimation. Zinc telluride can be also prepared as hexagonal crystals (wurzite
structure). Irradiated by a strong optical beam burns in presence of oxygen.
Optoelectronics
Zinc telluride is important for development of various semiconductor devices,
including blue LEDs, laser diodes, solar cells, and components of microwave
generators.
It can be used for solar cells as a background layer and the p-type
semiconductor in PIN structure (e.g. using cadmium telluride – p-type or i-type
semiconductor, and cadmium sulfide – n-type semiconductor).
Zinc telluride together with lithium niobate is often used for generation of
pulsed terahertz radiation in time-domain terahertz spectroscopy and terahertz
imaging. When a crystal of such material is subjected to a high-intensity light
pulse of subpicosecond duration, it emits a pulse of terahertz frequency through
a nonlinear optical process called optical rectification. Conversely, subjecting
a zinc telluride crystal to terahertz radiation causes it to show optical
birefringence and change the polarization of a transmitting light, making it an
electro-optic detector.
Electro-optics
Zinc telluride can be easily doped, and for this reason it is one of the more
common semiconducting materials used in optoelectronics.
Vanadium-doped zinc telluride, "ZnTe:V", is a non-linear optical photorefractive
material of possible use in the protection of sensors at visible wavelengths.
ZnTe:V optical limiters are light and compact, without complicated optics of
conventional limiters. ZnTe:V can block a high-intensity jamming beam from a
laser dazzler, while still passing the lower-intensity image of the observed
scene. It can also be used in holographic interferometry, in reconfigurable
optical interconnections, and in laser optical phase conjugation devices. It
offers superior photorefractive performance at wavelengths between 600–1300 nm,
in comparison with other III-V and II-VI compound semiconductors. By adding
manganese as an additional dopant (ZnTe:V:Mn), its photorefractive yield can be
significantly increased.
Application notes from Del Mar Photonics customer:
THz generation occurs via optical rectification in a <110> ZnTe. Optical rectification is a difference frequency mixing and occurs in media with large second order susceptibility, c(2). Optical rectification is actually analogous to frequency doubling. That is, a polarization is induced in the crystal that is the difference of the individual frequencies instead of their sum. This is due to the well known trigonometric relation: cos(A) * cos(B) = [cos(A+B) + cos(A-B)] / 2. Thus, light of a given frequency passing through a nonlinear medium will generate the same amount of both sum and difference frequencies, corresponding to second harmonic and dc. Another way of describing these processes is to consider the polarization induced in a medium at frequency 2w when it is driven at frequency w:
P(2w) = c(2w; w, +w) E(w)E(w) | Frequency doubling |
P(WTHz) = c(W THz; w, - w) E(w)E(w) | Optical Rectification |
For ultrashort laser pulses that have large bandwidth the frequency components are differenced with each other to produce bandwidth from 0 to several THz. Using either way to describe the process, the generated pulse is the envelope of the optical pulse.
Detection of the THz pulse occurs via free-space electro-optic detection in another <110> oriented ZnTe crystal. The THz pulse and the visible pulse are propagated collinearly through the ZnTe crystal. The THz pulse induces a birefringence in ZnTe crystal which is read out by a linearly polarized visible pulse. When both the visible pulse and the THz pulse are in the crystal at the same time, the visible polarization will be rotated by the THz pulse. Using a l/4 waveplate and a beamsplitting polarizer together with a set of balanced photodiodes, we "map" the THz pulse amplitude by monitoring the visible pulse polarization rotation after the ZnTe crystal at a variety of delay times with respect to the THz pulse.
The ability to read out the full electric field, both amplitude and delay, is one of the attractive features of time-domain THz spectroscopy. Note, the visible and THz pulses are collinearly propagated through the ZnTe crystal even though in the figure they appear to be propagate at an angle.
ZnTe crystal news and updates
Terahertz pulse generation
Ultrafast E-O Sampling using ZnTe Crystal and Ti:sapphire Laser
Ultrafast sub-ps resolution electro-optic (E-O) sampling system using ZnTe
crystal and Ti:sapphire laser
Zinc telluride (ZnTe) crystal structure, lattice parameters
substance: zinc telluride (ZnTe). 26s08d12. property: crystal structure, lattice
parameters, thermal expansion. crystal structure: zincblende, space group F
Growth and characterization of <110> oriented ZnTe single crystal
Optical Characterization of ZnTe Single Crystal
THz Generation and Detection in ZnTe
Detection of the THz pulse occurs via free-space electro-optic detection in
another <110> oriented ZnTe crystal
Greyhawk Optics - ZnTe crystal, 10x10x0.5 mm, 110-cut
The peak of the THz pulse amplitude shows a three-fold rotational symmetry when
the ZnTe detector crystal is rotated by 360° about an axis normal to the ...
The generation of terahertz (THz) pulses by the optical rectification of
femtosecond laser pulses in a ZnTe crystal
Annealing effects of a high-quality ZnTe substrate
Femtosecond Lasers - Reserve a spot in our femtosecond Ti:Sapphire training workshop during this summer in San Diego, California
Trestles femtosecond
Ti:Sapphire laser
Trestles Finesse femtosecond
Ti:Sapphire laser with integrated DPSS
pump laser
Teahupoo Rider femtosecond
amplified Ti:Sapphire laser
Mavericks femtosecond
Cr:Forsterite laser
Tamarack femtosecond
fiber laser (Er-doped fiber)
Buccaneer femtosecond
OA fiber laser (Er-doped fiber) and SHG
Cannon Ultra-broadband
light source
Tourmaline femtosecond
Yt-doped fiber laser