Under the 
      sponsorship of Bruker AXS, Inc., the UC Davis Vacuum Microelectronic Team 
      are undertaking the task of inventing a novel and innovative 
      high-resolution X-ray imaging detector using Field Emission Array (FEA) 
      technology.  The objective of this research is to design, fabricate, and 
      test the second phase of the Bruker X-ray detection project, using 
      highly-planar, gated, photosensitive, (FEA) photocathode.
              The gated FEAs are fabricated using subtractive etching techniques 
      and include Chemo-Mechanical-Polishing for a planar-gate surface.  The 
      advantages of implementing a planar-gate include higher spatial 
      resolution, enhanced dynamic range, reduced gate-cathode capacitance, and 
      a lower turn-on voltage (which reduces the chance of damage being caused 
      by high-voltage dielectric breakdown.)  Previous planar, gated designs 
      from other FEA groups [1], [2] show promising results, but have certain 
      deficiencies.  This design of gated-FEA photocathode has the potential 
      advantages of a planar gate surface, and can alleviate problems associated 
      with non-self-aligned gate openings and  uneven fabrication over a 
      large-area array.