Photoconductive antennas PCA with LT-GaAs absorber for laser excitation wavelengths

Photoconductive antennas for THz pulse generation - request a quote

800 nm

PCA with LT-GaAs absorber for laser excitation wavelengths λ ≤ 850 nm; optical absorption > 70%

Model	Product Name+	Buy Now
PCA-44-16-16-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-16-16-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-34-100-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-34-100-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-06-10-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-44-06-10-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-30-10-10-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-10-10-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-14-14-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm
PCA-30-14-14-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm

PCA - Photoconductive Antenna for terahertz waves
Del Mar Photonics - PCA brochure - buy online - PCA Q&A

Geometrical antenna parameters:

l - length of the antenna, defines the THz resonance frequency.
g - gap distance, important for laser excitation.
w - gap width.

PCA with LT-GaAs absorber for laser excitation wavelengths l £ 850 nm; optical absorption > 70%

Part No.	Delivery time	l (mm)	g (mm)	w (mm)	Description
PCA-44-06-10-800-x	1 week	44	06	10	PCA: resonance frequency 1 THz, l = 800 nm, gap distance 6 mm, optimal detector antenna
PCA-44-16-16-800-x	1 week	44	16	16	PCA: resonance frequency 1 THz, l = 800 nm, gap distance 16 mm
PCA-44-34-100-800-x	1 week	44	34	100	PCA: resonance frequency 1 THz, l = 800 nm, gap distance 34 mm
PCA-30-10-10-800-x	1 week	30	10	10	PCA: resonance frequency 1.5 THz, l = 800 nm, gap distance 10 mm
PCA-30-14-14-800-x	1 week	30	14	14	PCA: resonance frequency 1.5 THz, l = 800 nm, gap distance 14 mm

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PCA with LT-InGaAs layer for laser excitation wavelength l = 990 .. 1060 nm; optical absorption ~ 50%

Part No.	Delivery time	l (mm)	g (mm)	w (mm)	Description
PCA-44-06-10-1030-x	1 week	44	06	10	PCA: resonance frequency 1 THz, l = 990 .. 1060 nm, gap distance 6 mm, optimal detector antenna
PCA-44-16-16-1030-x	1 week	44	16	16	PCA: resonance frequency 1 THz, l = 990 .. 1060 nm, gap distance 16 mm
PCA-44-34-100-1030-x	1 week	44	34	100	PCA: resonance frequency 1 THz, l = 990 .. 1060 nm, gap distance 34 mm
PCA-30-10-10-1030-x	1 week	30	10	10	PCA: resonance frequency 1.5 THz, l = 990 .. 1060 nm, gap distance 10 mm
PCA-30-14-14-1030-x	1 week	30	14	14	PCA: resonance frequency 1.5 THz, l = 990 .. 1060 nm, gap distance 14 mm

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PCA with LT-InGaAs layer for laser excitation wavelength l ~ 1040 nm; optical resonant design with 97 % absorption @ 1040 nm

Part No.	Delivery time	l (mm)	g (mm)	w (mm)	Description
PCA-44-06-10-1040-x	1 week	44	06	10	PCA: resonance frequency 1 THz, l ~ 1040 nm, gap distance 6 mm, optimal detector antenna
PCA-44-16-16-1040-x	1 week	44	16	16	PCA: resonance frequency 1 THz, l ~ 1040 nm, gap distance 16 mm
PCA-44-34-100-1040-x	1 week	44	34	100	PCA: resonance frequency 1 THz, l ~ 1040 nm, gap distance 34 mm
PCA-30-10-10-1040-x	1 week	30	10	10	PCA: resonance frequency 1.5 THz, l ~ 1040 nm, gap distance 10 mm
PCA-30-14-14-1040-x	1 week	30	14	14	PCA: resonance frequency 1.5 THz, l ~ 1040 nm, gap distance 14 mm

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Part No. example	Description
PCA-44-06-10-800-x	PhotoConductive Antenna
PCA-44-06-10-800-x	length l = 44 mm
PCA-44-06-10-800-x	gap distance g = 6 mm
PCA-44-06-10-800-x	gap width w = 10 mm
PCA-44-10-800-x	laser excitation wavelength l = 800 nm
PCA-44-06-10-800-0	unmounted chip, area: 2 mm x 2 mm, thickness: 400 µm, with 4 bond contact pads
PCA-44-06-10-800-h	mounted on a hyperhemispherical Si lens, 25.4 mm diameter Al heat sink, 1 m long coaxial cable with BNC or SMA connector

Del Mar Photonics - PCA brochure - buy online

Model	Product Name+	Buy Now
iPCAp-21-05-1000-800	iPCAp, 800 nm, 21x5x1000 microns
iPCAp-21-05-300-800-	iPCAp, 800 nm, 21x5x300 microns
iPCAs-21-05-1000-104	iPCAs, 1040 nm, 21x5x1000 microns
PCA-44-16-16-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-16-16-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-34-100-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-34-100-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-06-10-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-44-06-10-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-44-16-16-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm
PCA-44-16-16-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm
PCA-44-34-100-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm
PCA-44-34-100-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm
PCA-44-06-10-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm
PCA-44-06-10-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm
PCA-44-16-16-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm
PCA-44-16-16-1040-u	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm
PCA-44-34-100-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm
PCA-44-34-100-1040-u	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm
PCA-44-06-10-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm

PCA-44-06-10-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm
PCA-30-10-10-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-10-10-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-14-14-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm
PCA-30-14-14-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm
PCA-30-10-10-1030-u	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm
PCA-30-10-10-1030-h	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm
PCA-30-14-14-1030-h	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm
PCA-30-14-14-1030-u	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm
PCA-30-10-10-1040-h	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm
PCA-30-10-10-1040-u	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm
PCA-30-14-14-1040-u	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm
PCA-30-14-14-1040-h	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm

800 nm

PCA with LT-GaAs absorber for laser excitation wavelengths λ ≤ 850 nm; optical absorption > 70%

Model	Product Name+	Buy Now
PCA-44-16-16-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-16-16-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm
PCA-44-34-100-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-34-100-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm
PCA-44-06-10-800-u	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-44-06-10-800-h	PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm
PCA-30-10-10-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-10-10-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm
PCA-30-14-14-800-h	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm
PCA-30-14-14-800-u	PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm

990-1060 nm

PCA with LT-GaAs absorber for laser excitation wavelengths λ = 990 .. 1060 nm; optical absorption ~ 50%

Model	Product Name+	Buy Now
PCA-44-16-16-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm
PCA-44-16-16-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm
PCA-44-34-100-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm
PCA-44-34-100-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm
PCA-44-06-10-1030-u	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm
PCA-44-06-10-1030-h	PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm
PCA-30-10-10-1030-u	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm
PCA-30-10-10-1030-h	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm
PCA-30-14-14-1030-u	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm
PCA-30-14-14-1030-h	PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm

1040 nm

PCA with LT-GaAs absorber for laser excitation wavelengths λ ~ 1040 nm; optical resonant design 97% absorption @ 1040 nm

Model	Product Name+	Buy Now
PCA-44-16-16-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm
PCA-44-16-16-1040-u	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm
PCA-44-34-100-1040-u	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm
PCA-44-34-100-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm
PCA-44-06-10-1040-h	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm
PCA-44-06-10-1040-u	PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm
PCA-30-10-10-1040-u	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm
PCA-30-10-10-1040-h	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm
PCA-30-14-14-1040-h	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm
PCA-30-14-14-1040-u	PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm

Del Mar Photonics - PCA brochure - buy online - PCA Q&A

*PCA - Photoconductive Antenna for THz Applications* Del Mar Photonics - PCA brochure - PCA models - buy online
	>	Contents
		How does a PCA work? PCA applications Frequency and wavelength Substrate lens
>	How does a PCA work?
	A photoconductive antenna (PCA) for terahertz (THz) waves consists of a highly resistive direct semiconductor thin film with two electric contact pads. The film is made in most cases using a III-V compound semiconductor like GaAs. It is epitaxially grown on a semi-insulating GaAs substrate (SI-GaAs), which is also a highly resistive material. The important difference between the SI-GaAs substrate and the film is the relaxation time for excited carriers. In a SI-substrate the carrier lifetime is about 500 ps, but in the film shorter than 1 ps.

	A short laser puls with puls width < 1 ps is focused between the electric contacts of the PCA. The photons of the laser pulse have a photon energy E = h× n larger than the energy gap E_g and are absorbed in the film. Each absorbed photon creates a free electron in the conduction band and a hole in the valence band of the film and makes them for a short time electrical conducting until the carriers are recombined. The PCA can be used as THz transmitter as well as THz receiver. In case of a transmitter a voltage V is connected on the electrical contacts and the excited carriers are accelerated by the electric field during the optical pulse, which results in a short broadband electromagnetic pulse with a time-dependent electrical field E(t) and frequencies in the THz region. In case of a receiver a current amplifier is connected on the electrical contacts. During the optical pulse the excited carriers are accelerated by the electric field component of the incident terahertz pulse with the time-dependent electrical field E(t). This leads to a measurable current signal in the outer circuit.

	To get the needed short carrier lifetime, the film must include crystal defects. These defects can be created by ion implantation after the film growth or alternatively by a low temperature growth. Low temperature grown GaAs (LT-GaAs) between 200 and 400 °C contains excess arsenic clusters. These clusters create defect levels within the band gap E_g and lead to a fast non-radiative recombination of the electron-hole pairs within a time interval < 1 ps.

>	PCA applications
	As mentioned above, a PCA can be used as a THz emitter or detector in pulse laser gated broadband THz measurement systems for time-domain spectroscopy. Because THz waves penetrate dielectric materials like paper or plastic, are reflected by materials with free electrons like metals and are absorbed by moleculs with certain vibration levels within the terahertz band, they have a lot of applications in the fields of time-domain spectroscopy and and imaging: security checks medical imaging process control.
	Security checks: Screening passengers for explosives and weapons luggage screening mail drug screening mine detection locating water marks in currency reading text in envelopes or beneath paint.
	Medical imaging for brest and skin cancer detection and for teeth testing in dentistry. Terahertz waves offers medical benefits: Terahertz radiation is nonionizing. That means, it is safe. It can penetrate epithelial tissues. Laterally image resolution of 250 µm is possible. 3-D imaging using amplitude and phase information is possible.
	Process control for: polymeric compounding examining circuit interconnects in packaged ICs final control of packaged products quality control in food processing rapid characterisation of the stability and polymorphic forms of drugs.

>	Frequency and wavelength

	The photoconductive antenna can be considered as a dipole of the length L, which is in resonance with the electromagnetic wavelength l_n inside the semiconductor. The resonance condition is L = m ⋅ l_n/2 with m = 1, 2, 3,..- integer. The wavelength l_n in the material with the refractive index n is given by l_n = l/n. Using the wave relation c = l ^. f and m = 1, the resonance frequency of the antenna f is given by f = 2×c×n/L with c = 3×10⁸ m/s - speed of light in the vacuum n - refractive index of the semiconductor antenna material L - length of the antenna.

	The refractive index n of GaAs at terahertz frequencies is n = 3.4. With this value the first resonant frequency and wavelength of the antenna with the length L can be calculated as follows:

		f (THz)	l (µm)	L (µm)
		0.3	1000	147
		0.5	600	88
		1.0	300	44
		1.5	200	29.4
		3.0	100	14.7


>	Substrate lens for PCA transmitter
	PCA without substrate lens
	Because of the high refractive index n ~ 3.4 of the semiconductor PCA the outgoing terahertz waves are strongly diffracted at the substrate-air interface. The boundary angle a for the total reflection can be calculated with a = arcsin(n^-1) ~ 17.1 ° Only the THz waves emitted in the solid angle W with


	can escape the substrate. For GaAs with n = 3.4 the escape solid angle is W = 0.28. This is only 4.4% of the forward directed intensity.

	Aplanatic hyperhemispherical lens

	To increase the escape cone angle a , a hemispherical lens with the same refractive index n as the PCA can be used. To decrease the divergence in air, a hyperhemispherical lens with a certain distance d from the emitter to the tip of the lens is common. If this distance d is

	the hyperhemispherical lens is aplanatic, that means without spherical and coma aberration. For a silicon lens with almost the same refractive index n ~ 3.4 as GaAs at therahertz frequencies the distance is d = 1.29 r with the lens radius r. The height h of the aplanatic hyperhemispherical lens is therefore h = d - t with the thickness t of the semiconductor PCA. The length L from the lens tip to the virtuell focus behind the lens is given by
		L = r (n+1)
	For silicon is L = 4.4 r. With this hyperhemispherical lens nearly all the forward directed terahertz intensity can escape the PCA. The problem left is the beam divergence, which requires a further focussing element like a lens or mirror.

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with clear aperture diameters from 12.5 to 37.5 mm.
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better, standard designs at 19.0 and 25.4 mm diameters.
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iPCA - interdigital Photoconductive Antenna for terahertz waves
Large area broadband antenna with lens array and high emitter conversion efficiency
iPCA with LT-GaAs absorber, microlens array for laser excitation wavelengths l £ 850 nm, adjusted hyperhemispherical silicon lens with a high power conversion efficiency of 0.2 mW THz power / W optical power. The iPCA can be used also as large area THz detector. The two types iPCAp and iPCAs have the same active interdigital antenna area but different contact pad directions with respect to the electrical THz field.
Interdigital Photoconductive Antenna for terahertz waves generation using femtosecond Ti:Sapphire laser

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