Teraherts products from Del Mar Photonics
Pacifica THz Time Domain Spectrometer
THz Photoconductive Antenna -
buy from stock
Generation of 10 µJ ultrashort terahertz pulses by optical rectification
using
Wedge TiSapphire Multipass Amplifier
Crystals for THz generation:
Gallium Phosphor GaP 110-cut crystals for THz applications
GaSe is used as infrared nonlinear crystal and for THz applications
GaSe crystal, Z-cut, 10x10x1 mm
ZnTe crystals for THz generation ZnTe
crystal, 10x10x0.5 mm, 110-cut
Photoconductive Antenna for terahertz waves
iPCA - interdigital Photoconductive Antenna for terahertz waves
THz detectors: Golay cell and LiTaO3 piroelectric detectors
Trestles
femtosecond Ti:Sapphire laser
Trestles Finesse
femtosecond Ti:Sapphire laser with integrated
DPSS pump laser
Teahupoo Rider
femtosecond amplified Ti:Sapphire laser
Mavericks
femtosecond Cr:Forsterite laser
Tamarack
femtosecond fiber laser (Er-doped fiber)
Buccaneer
femtosecond OA fiber laser (Er-doped fiber) and SHG
Cannon Ultra-broadband
light source
Tourmaline femtosecond Yt-doped
fiber laser
Del Mar Photonics - Del Mar Photonics at Optics and Photonics 2008
Terahertz wave presenations at Optics and Photonics 2008
Towards large area THz electromagnetic metamaterials (Paper
Presentation)
Paper 7029-12 of Conference 7029
Authors(s): Herbert O. Moser, National Univ. of Singapore (Singapore)
Date: Sunday, 10 August 2008
Up to date, metamaterials have been mostly produced by primary pattern
generation via e-beam or laser which is time-consuming and may yield only
limited useful areas. Particularly, e-beam writing may only cover some 100×100
μm2. However, many applications require larger quantities of good quality
materials. Since 2002, SSLS has been using its X-ray-lithography-based LIGA
process to micro/nanomanufacture a variety of high-aspect-ratio metamaterials
structures. Split-ring designs have led to resonance frequencies from 1 - 216
THz. Meanwhile, stringlike structures have also been included. Latest progress
in the manufacturing and characterization of 1 cm2 quasi-3D metamaterials
structures will be described.
Surface-plasmon-polariton-enhanced reflected THz-field (Paper
Presentation)
Paper 7065-3 of Conference 7065
Authors(s): Dan-Hong Huang, Air Force Research Lab.; Godfrey A. Gumbs, Hunter
College/CUNY; Paul M. Alsing, David A. Cardimona, Air Force Research Lab.
Date: Monday, 11 August 2008
The present work predicts the large enhancements at the band edges of a coupled
Bloch-surface-plasmon-polariton band in the spectrum of the reflected far
electromagnetic field due to anti-crossing gaps induced by the strong coupling
between the continuous surface-plasmonpolariton mode and the discrete Bloch-like
modes. The existence of these Bloch-like modes is a direct consequence of the
nonlocal mixing of specular and diffraction modes of the reflected
electromagnetic field by free-electron induced optical polarization and the
interference of a pair of surface optical-polarization waves with opposite Bragg
order numbers in the presence of a grating.
THz generation by X(3) media (Poster Presentation)
Paper 7056-48 of Conference 7056
Authors(s): Shizhuo Yin, Meng-Ku Chen, Peng Li, The Pennsylvania State Univ.
Date: Tuesday, 12 August 2008
In this paper, we review the THz generation in X(3) media via the third order
nonlinear effects. For example, THz wave has been successfuly generated by the
air plasma via the third order nonlinear effects by several groups around the
world. Besides the air plasma in the free space form, the air plasma in a
confined structure (e.g., metal waveguides, photonic crystal waveguides) and the
possibility of generating THz wave in other types of isotropic media (e.g.,
glasses) are also investigated.
Plasmon mediated InGaAs/InP tunable far-IR detector (Paper
Presentation)
Paper 7082-8 of Conference 7082
Authors(s): Walter R. Buchwald, Air Force Research Lab.; Himanshu Saxena, Robert
E. Peale, Univ. of Central Florida
Date: Monday, 11 August 2008
This work presents an experimental investigation of a THz detector based on
plasmon excitation in the two dimensional electron gas of a high electron
mobility transistor. This device, fabricated from the InGaAs/InP material
system, relies on e-beam lithography to fabricate a gate in the form of a
grating with sub-micron period. Sensitivity of the device conductance to
incident THz fields is reported. Direct absorption of THz radiation, temperature
effects, and the effects of source to drain current on system performance are
also investigated. It is expected that this class of device will find use in
spaceborne remote sensing applications.
Heterodyne receivers based on an NbN hot electron bolometer mixer
and a quantum cascade laser as local oscillator above 2 THz (Paper Presentation)
Paper 7082-18 of Conference 7082
Authors(s): Pourya Khosropanah, SRON Netherlands Institute for Space Research
(Netherlands); Wen Zhang, Purple Mountain Observatory (China) and SRON
Netherlands Institute for Space Research (Netherlands); Jian-Rong Gao, SRON
Netherlands Institute for Space Research (Netherlands) and Technische Univ.
Delft (Netherlands); J. Niels Hovenier, Technische Univ. Delft (Netherlands);
Wouter M. Laauwen, SRON Netherlands Institute for Space Research (Netherlands);
Merlijn Hajenius, Technische Univ. Delft (Netherlands) and SRON Netherlands
Institute for Space Research (Netherlands); Teun M. Klapwijk, Technische Univ.
Delft (Netherlands)
Date: Tuesday, 12 August 2008
Future space borne or airborne heterodyne receivers will target frequency range
of 2-6 THz, which holds crucial information on astronomical objects as well as
on chemical composition of Earth’s atmosphere. Here we highlight the progress on
heterodyne receivers above 2 THz. This includes our latest result i.e. 2100 K
double side band receiver noise temperature at 3.5 THz using a distributed
feedback (DFB) QCL as LO and an HEB mixer integrated with spiral antenna. We
also discuss suitability of such a QCL as an LO in a real space instrument in
terms of beam pattern, power consumption and stability.
Terahertz conductivity measurements in films of semiconductor and
metallic single walled carbon nanotubes. (Paper Presentation)
Paper 7034-21 of Conference 7034
Authors(s): Matthew C. Beard, Michael J. Heben, Jeffery Blackburn, National
Renewable Energy Lab.
Date: Tuesday, 12 August 2008
We report the frequency-dependent complex conductivity in the far-infrared for a
series of single walled carbon nanotube (SWCNT) films where the ratio of
metallic to semiconductor tube types has been systematically varied. We studied
films of 6.2, 23.5, 29.5, 57.9, 93.1, and 97.8% metallic tube content. In
addition we explored the effect on the THz conductivity when films are
subsequently p-doped by treating with thionel chloride. We find that the real
part of the conductivity increases with increasing frequency and the imaginary
part is negative. This phenomenon is characteristic of materials that have a
suppressed long range transport due to disorder or materials that exhibit
stochastic transport. We analyze the results by using a Drude-Smith conductivity
model at low frequencies and a lorenzitian oscillator at higher frequencies. We
find that extracted dc conductivity from the ac (THZ) measurements compare
favorably to a four-point-probe measurement.
Optical studies of plasmonic metamaterials (Paper Presentation)
Paper 7033-49 of Conference 7033
Authors(s): Valy Z. Vardeny, The Univ. of Utah
Date: Wednesday, 13 August 2008
Extraordinary optical transmission (EOT) through periodic and aperiodic arrays
of subwavelength apertures is an example of metamaterial media. The
subwavelength nature of the active surface plasmon polariton (SPP) excitations,
along with strong field localization in these structures open up novel
applications in bio-sensing, guided-wave devices and quantum optics. Our work
has been primarily focused on the fundamental investigation and development of
two-dimensional (2D) plasmonic metamaterials that are active in the visible,
infrared and terahertz (THz) frequencies. Using pump-probe spectroscopy we
investigated the transient response of photoexcited SPP excitations. Also using
THz time-domain spectroscopy we measured the transmission properties of periodic
and aperiodic aperture arrays.
Frontside-illuminated quantum well photodetector for far-infrared
range (Paper Presentation)
Paper 7055B-21 of Conference 7055B
Authors(s): Mikhail A. Patrashin, Iwao Hosako, National Institute of Information
and Communications Technology (Japan)
Date: Monday, 11 August 2008
We have demonstrated the operation of a frontside-illuminated GaAs/AlGaAs
quantum well photodetector based on intersubband absorption in a quantum well (QW)
with a targeted peak frequency of 3 THz. A multiple quantum well structure
consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al
alloy content of 2%. We measured the following performance characteristics: dark
current, responsivity, and spectral response. We looked also at possible designs
to optimize the device’s performance.
Frequency dependence of the observed phase transition in
nanostructured and doped VO2 thin films (Paper Presentation)
Paper 7041-18 of Conference 7041
Authors(s): Geoffrey B. Smith, Angus R. Gentle, Univ. of Technology/Sydney
(Australia)
Date: Thursday, 14 August 2008
The nature of the phase transition in doped and nano-VO2 is shown to depend on
the frequency at which it is observed. A transient correlated insulator is seen
above Tc at frequencies under THz, while it appears metallic and uncorrelated at
optical frequencies.
Trapping light without double negative index metamaterials for
all frequencies (Paper Presentation)
Paper 7029-19 of Conference 7029
Authors(s): Wen-Tao Lu, Northeastern Univ.
Date: Monday, 11 August 2008
Recently, Tsakmakidis et al (Nature 450, 397 (2007)) proposed to use double
negative index waveguide to trap light. In this talk, I propose different
schemes to trap light in planar and cylindrical waveguide structures without the
use of double negative index metamaterials. For frequencies ranged from
microwaves, THz waves, and up to the visibles, different feasible realizations
are provided and verified by numerical simulations. Our experimental results on
trapping and slow light will also be discussed.
Surface plasmon localization for the optical control of field
emission (Paper Presentation)
Paper 7037-26 of Conference 7037
Authors(s): Pierrick Guiset, Sylvain Combrie, Mathieu Carras, Alfredo De Rossi,
Jean-Philippe P. Schnell, Pierre Legagneux, Thales Research & Technology
(France)
Date: Tuesday, 12 August 2008
We present the first steps for the validation of an optically driven field
emission cathode. This approach relies on the interaction of surface plasmons
with vertically aligned multi-wall carbon nanotubes or metallic nanowires
arrays. The objective is to modulate the field emission current by using the
optical component at the field emitter apex through antenna coupling. Thanks to
metallic surface cavities, surface plasmons will be generated and localized in
the vicinity of nanoemitters to improve interaction efficiency. First
simulations and experimental measurements will be presented jointly with
perspectives for the wideband modulation of electronic beams till THz.
Terahertz wave propergation in structured metals (Paper
Presentation)
Paper 7033-31 of Conference 7033
Authors(s): Masanori Hangyo, Keisuke Takano, Kyoji Shibuya, Osaka Univ. (Japan);
Fumiaki Miyamaru, Shinshu Univ. (Japan); Hiroshi Miyazaki, Tohoku Univ. (Japan)
Date: Tuesday, 12 August 2008
Electromagnetic wave propagation in structured metals has attracted strong
attention in wide wavelength regions from microwave to visible. We have
investigated transmission properties of metal hole arrays in the terahertz
region by using the terahertz time-domain spectroscopy (THz-TDS). We have found
variety of transmission properties depending on the periodic structure of
metals, i. e. extraordinary transmission, large polarization conversion, and
large optical activity, etc. Some of the properties are explained by the surface
plasmon-polariton and the local structure of holes.
Theoretical studies of defect states in GaSe and GaTe (Paper
Presentation)
Paper 7079-26 of Conference 7079
Authors(s): Zsolt Rak, S. D. Mahanti, Michigan State Univ.; Krishna C. Mandal,
EIC Labs., Inc.; Nils C. Fernelius, Air Force Research Lab.
Date: Tuesday, 12 August 2008
GaSe and GaTe are promising materials for radiation detectors and various opto-electronic
devices including time-domain terahertz spectroscopy (TDTS), broadband tunable
terahertz (THz) sources and detectors. In all these applications charge carrier
creation and transport play crucial roles. Electrical, optical and transport
properties of semiconductors are strongly affected by defects. In order to
understand the nature of defect states in these semiconductors we have carried
out ab initio studies using density functional theory and supercell model.
Theoretical binding energy values for a series of defects in GaSe and GaTe are
calculated and found to be in good agreement with the experimental result.
From nano to meta: plasmonic waveguides and their
characterization in different parts of the spectrum (Paper Presentation)
Paper 7032-55 of Conference 7032
Authors(s): Stefan A. Maier, Imperial College (United Kingdom)
Date: Wednesday, 13 August 2008
This talk will present both design principles for plasmonic waveguides offering
sub-wavelength scale mode confinement working in different parts of the
spectrum, and important techniques for their experimental characterization.
Examples will be drawn from plasmon waveguides working at visible frequencies,
where sub-wavelength energy localization is achieved via intrinsic effects. At
lower frequencies, a metamaterial approach is needed to engineer spoof surface
plasmon polaritons modes with effective plasma frequencies controlled by the
surface geometry alone. Numerical results as well as experimental demonstrations
of waveguides operating in at visible and at THz frequencies will be discussed,
and their properties assessed.
Ultrafast local investigations of plasmonic structures (Paper
Presentation)
Paper 7032-59 of Conference 7032
Authors(s): Laurens Kuipers, FOM Institute for Atomic and Molecular Physics
(Netherlands)
Date: Wednesday, 13 August 2008
Both plasmonic and periodic structures can exert a huge control over
electromagnetic waves at the nanoscale. The result may be slow light in photonic
crystal waveguides or huge field enhancements near metal nanostructures. With
plasmonic crystals we gain the best of both worlds. Visualization of the
propagation with subwavelength resolution allows the optical properties to be
unravelled in detail. With a time-resolved near-field microscope we have tracked
plasmonic wavepackets (duration 100 fs) as they propagate. We show that plasmons
in periodic structures obey Bloch's theorem. Moreover, we can slow the
wavepackets down for their entire bandwidth (~4 THz).
Terahertz plasmonic energy concentration (Paper Presentation)
Paper 7029-22 of Conference 7029
Authors(s): Mark I. Stockman, Maxim Durach, Anastasia Rusina, Georgia State
Univ.
Date: Monday, 11 August 2008
We present theory of subwavelength terahertz spoofed plasmonics. We propose an
approach to highly efficient concentration of the terahertz oscillation energy
on a deep subwavelength scale using metamaterials structures. Efficient
metal-dielectric structures structures are presented that allow for
subwavelength focusing of terahertz waves to ~0.01 of the vacuum wavelength.
Wide range of applications are possible and discussed.
Terahertz wave propergation in structured metals (Paper
Presentation)
Paper 7033-31 of Conference 7033
Authors(s): Masanori Hangyo, Keisuke Takano, Kyoji Shibuya, Osaka Univ. (Japan);
Fumiaki Miyamaru, Shinshu Univ. (Japan); Hiroshi Miyazaki, Tohoku Univ. (Japan)
Date: Tuesday, 12 August 2008
Electromagnetic wave propagation in structured metals has attracted strong
attention in wide wavelength regions from microwave to visible. We have
investigated transmission properties of metal hole arrays in the terahertz
region by using the terahertz time-domain spectroscopy (THz-TDS). We have found
variety of transmission properties depending on the periodic structure of
metals, i. e. extraordinary transmission, large polarization conversion, and
large optical activity, etc. Some of the properties are explained by the surface
plasmon-polariton and the local structure of holes.
Plasmonic metamaterials and their applications in novel terahertz
devices (Paper Presentation)
Paper 7033-52 of Conference 7033
Authors(s): Taiichi Otsuji, Tohoku Univ. (Japan)
Date: Wednesday, 13 August 2008
[Invited] “Metamaterial” is one of the emerging science and engineering regions
where new paradigm of manipulating electromagnetic waves from microwaves to
beyond optical waves in various extraordinary ways are just now being born. This
presentation reviews recent advances in terahertz electromagnetic metamaterials.
In particular, the topics will be focused on plasmonic metamaterials where
material- and structure-dependent highly dispersive systems are configured in
submicron-to-nanometer scaled artificial dimensions to perform emission,
detection, and moreover higher functional signal processing like intensity
modulation as well as frequency multiplication in an exploring terahertz
frequency region.
Near-field studies of surface plasmon generation: optical and
terahertz studies (Paper Presentation)
Paper 7032-63 of Conference 7032
Authors(s): Dai-sik Kim, Hyun Woo Kihm, Kwang-Geol Lee, Min Ah Seo, Seoul
National Univ. (South Korea); A. J. L. Adam, Technische Univ. Delft
(Netherlands); JiHoon Kang, Korea Univ. (South Korea); Kwang Jun Ahn, Seoul
National Univ. (South Korea); Q-Han Park, Korea Univ. (South Korea); P.C.M.
Planken, Technische Univ. Delft (Netherlands)
Date: Wednesday, 13 August 2008
We study the dielectric constant dependent diffraction phenomena of single slit
aperture, both theoretically and experimentally. We experimentally simulate the
perfect metal and a real metal cases by investigating sub-wavelength diffraction
by a single slit, both in nano-optical and in terahertz regimes keeping the
slit-width/wavelength ratio approximately the same for both of frequency
regimes. The wave-front in optical regime separates itself into forward
propagating beam and surface-bound 90-degree diffracted wave, i.e., surface
plasmon polaritons; while separation of modes is not observed in terahertz
regime.
Terahertz conductivity measurements in films of semiconductor and
metallic single walled carbon nanotubes. (Paper Presentation)
Paper 7034-21 of Conference 7034
Authors(s): Matthew C. Beard, Michael J. Heben, Jeffery Blackburn, National
Renewable Energy Lab.
Date: Tuesday, 12 August 2008
We report the frequency-dependent complex conductivity in the far-infrared for a
series of single walled carbon nanotube (SWCNT) films where the ratio of
metallic to semiconductor tube types has been systematically varied. We studied
films of 6.2, 23.5, 29.5, 57.9, 93.1, and 97.8% metallic tube content. In
addition we explored the effect on the THz conductivity when films are
subsequently p-doped by treating with thionel chloride. We find that the real
part of the conductivity increases with increasing frequency and the imaginary
part is negative. This phenomenon is characteristic of materials that have a
suppressed long range transport due to disorder or materials that exhibit
stochastic transport. We analyze the results by using a Drude-Smith conductivity
model at low frequencies and a lorenzitian oscillator at higher frequencies. We
find that extracted dc conductivity from the ac (THZ) measurements compare
favorably to a four-point-probe measurement.
Theoretical studies of defect states in GaSe and GaTe (Paper
Presentation)
Paper 7079-26 of Conference 7079
Authors(s): Zsolt Rak, S. D. Mahanti, Michigan State Univ.; Krishna C. Mandal,
EIC Labs., Inc.; Nils C. Fernelius, Air Force Research Lab.
Date: Tuesday, 12 August 2008
GaSe and GaTe are promising materials for radiation detectors and various opto-electronic
devices including time-domain terahertz spectroscopy (TDTS), broadband tunable
terahertz (THz) sources and detectors. In all these applications charge carrier
creation and transport play crucial roles. Electrical, optical and transport
properties of semiconductors are strongly affected by defects. In order to
understand the nature of defect states in these semiconductors we have carried
out ab initio studies using density functional theory and supercell model.
Theoretical binding energy values for a series of defects in GaSe and GaTe are
calculated and found to be in good agreement with the experimental result.
Optical studies of plasmonic metamaterials (Paper Presentation)
Paper 7033-49 of Conference 7033
Authors(s): Valy Z. Vardeny, The Univ. of Utah
Date: Wednesday, 13 August 2008
Extraordinary optical transmission (EOT) through periodic and aperiodic arrays
of subwavelength apertures is an example of metamaterial media. The
subwavelength nature of the active surface plasmon polariton (SPP) excitations,
along with strong field localization in these structures open up novel
applications in bio-sensing, guided-wave devices and quantum optics. Our work
has been primarily focused on the fundamental investigation and development of
two-dimensional (2D) plasmonic metamaterials that are active in the visible,
infrared and terahertz (THz) frequencies. Using pump-probe spectroscopy we
investigated the transient response of photoexcited SPP excitations. Also using
THz time-domain spectroscopy we measured the transmission properties of periodic
and aperiodic aperture arrays.
Package inspection using inverse diffraction (Paper Presentation)
Paper 7072-16 of Conference 7072
Authors(s): Alastair D. McAulay, Lehigh Univ.
Date: Wednesday, 13 August 2008
Related Del Mar Photonics products
PCA - Photoconductive
antenna for terahertz applications
Pacifica femtosecond
fiber laser based terahertz spectrometer
Femtosecond
nanophotonics
PCA | |
Photoconductive Antenna for terahertz waves |
|
800 nm | |
PCA with LT-GaAs absorber for laser excitation wavelengths λ ≤ 850 nm; optical absorption > 70% |
Model | Product Name+ | Buy Now |
PCA-44-16-16-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm | |
PCA-44-16-16-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm | |
PCA-44-34-100-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm | |
PCA-44-34-100-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm | |
PCA-44-06-10-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm | |
PCA-44-06-10-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm | |
PCA-30-10-10-800-u | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm | |
PCA-30-10-10-800-h | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm | |
PCA-30-14-14-800-u | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm | |
PCA-30-14-14-800-h | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm |
Displaying 1 to 10 (of 10 products) |
990-1060 nm | |
PCA with LT-GaAs absorber for laser excitation wavelengths λ = 990 .. 1060 nm; optical absorption ~ 50% |
Model | Product Name+ | Buy Now |
PCA-44-16-16-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm | |
PCA-44-16-16-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm | |
PCA-44-34-100-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm | |
PCA-44-34-100-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm | |
PCA-44-06-10-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm | |
PCA-44-06-10-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm | |
PCA-30-10-10-1030-h | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm | |
PCA-30-10-10-1030-u | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm | |
PCA-30-14-14-1030-u | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm | |
PCA-30-14-14-1030-h | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm |
Displaying 1 to 10 (of 10 products) |
1040 nm | |
PCA with LT-GaAs absorber for laser excitation wavelengths λ ~ 1040 nm; optical resonant design 97% absorption @ 1040 nm |
Model | Product Name+ | Buy Now |
PCA-44-16-16-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm | |
PCA-44-16-16-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm | |
PCA-44-34-100-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm | |
PCA-44-34-100-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm | |
PCA-44-06-10-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm | |
PCA-44-06-10-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm | |
PCA-30-10-10-1040-u | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm | |
PCA-30-10-10-1040-h | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm | |
PCA-30-14-14-1040-h | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm | |
PCA-30-14-14-1040-u | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm |
Displaying 1 to 10 (of 10 products) |
iPCA | |
interdigital Photoconductive Antenna for terahertz waves |
Model | Product Name+ | Buy Now |
iPCAp-21-05-1000-800 | iPCAp, 800 nm, 21x5x1000 microns | |
iPCAp-21-05-300-800- | iPCAp, 800 nm, 21x5x300 microns | |
iPCAs-21-05-1000-800 | iPCAs, 800 nm, 21x5x1000 microns | |
iPCAs-21-05-300-800- | iPCAs, 800 nm, 21x5x300 microns |
Displaying 1 to 4 (of 4 products) |
Femtosecond Lasers - Reserve a spot in our femtosecond Ti:Sapphire training workshop during this summer in San Diego, California
Trestles
femtosecond Ti:Sapphire laser
Trestles Finesse
femtosecond Ti:Sapphire laser with integrated
DPSS pump laser
Teahupoo Rider
femtosecond amplified Ti:Sapphire laser
Mavericks
femtosecond Cr:Forsterite laser
Tamarack
femtosecond fiber laser (Er-doped fiber)
Buccaneer
femtosecond OA fiber laser (Er-doped fiber) and SHG
Cannon Ultra-broadband
light source
Tourmaline femtosecond Yt-doped
fiber laser
Chata femtosecond Cr:ZnSe laser (2.5 micron) coming soon
Phonics West 2008:
applications of femtosecond lasers
High Power Femtosecond Laser Systems - Reserve a spot in our femtosecond Ti:Sapphire training workshop during this summer in San Diego, California
Cortes
800 tabletop 40 TW Ti:Sapphire laser system
Cortes E
- High vacuum laser ablation/deposition system with 2 TW Ti:Sapphire laser
Cortes K
- femtosecond seed laser for Petawatt KrF excimer laser
Cortes O 200TW femtosecond
laser - KD*P CPOPA based amplifier system
Jaws
femtosecond Cr:forsterite Multi-Terawatt Amplified Laser
High-vacuum system
for laser ablation/deposition
Femtosecond pulse measurement instrumentation - Reserve a spot in our femtosecond Ti:Sapphire training workshop during this summer in San Diego, California
Reef
scanning and single shot femtosecond autocorrelators
Avoca SPIDER
- Spectral phase interferometry for direct electric-field reconstruction
(SPIDER)
Rincon
third order femtosecond cross-correlator (third order autocorrelator TOAC) also
referred to as contrastmeter
Ultrafast Dynamics Research Tools - Reserve a spot in our Ultrafast Dynamics Tools training workshop during this summer in San Diego, California
Beacon
femtosecond fluorescence up-conversion (optical gating) spectrometer
Hatteras
Ultrafast Transient Absorption Spectrometer
Femtosecond Systems and Accessories - Reserve a spot in our femtosecond Ti:Sapphire training workshop during this summer in San Diego, California
Femtosecond
Micromachining
Femtosecond
nanophotonics
Femtosecond NSOM
Pacifica femtosecond
fiber laser based terahertz spectrometer
Pismo pulse
picker (ultrafast electro-optical shutter)
Wavelength conversion: second and third harmonics generators for femtosecond
lasers
Jibe white light
continuum generator
Kirra
Optical Faraday Rotators and Isolators
Laser accessories
Diffractive Variable Attenuator
for high power lasers
Deformable mirrors - active elements for adaptive optics systems -
Reserve a spot in our
Adaptive optics
and wavefront sensors workshop in San Diego
ShaH -
the family of fast, accurate and reliable wavefront sensors
Complete adaptive
optics systems
Faraday rotators and
isolators for high-power (up to 1kW) laser beams
SAM - Saturable Absorber
Mirrors
PCA - Photoconductive
antenna for terahertz applications
|
Terahertz Spectroscopy: Principles and Applications (Optical
Science and Engineering) ~ Susan L. Dexheimer The development
of new sources and methods in the terahertz spectral range has generated
intense interest in terahertz spectroscopy and its application in an array
of fields. Presenting state-of-the-art terahertz spectroscopic techniques,
Terahertz Spectroscopy: Principles and Applications focuses on time-domain
methods based on femtosecond laser sources and important recent applications
in physics, materials science, chemistry, and biomedicine. |
Principles of Terahertz Science and Technology (Lecture Notes in Physics) ~ Yun-Shik Lee Principles of Terahertz
Science and Technology aims to elucidate the fundamentals of THz technology
and science for potential new users. It surveys major techniques of
generating, detecting, and manipulating THz waves and also discusses a
number of essential processes where THz waves interact with physical,
chemical, and biological systems. This book serves as an introduction to THz
technology for new researchers in various fields. |
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Terahertz Science And Technology For Military And Security Applications (Selected Topics in Electronics and Systems) ~ Dwight L. Woolard The inherent advantages and potential payoffs of the
terahertz (THz) regime for military and security applications serve as an
important driver for interest in new THz-related science and technology. In
particular, the very rapid growth in more recent years is arguably most
closely linked to the potential payoffs of THz sensing and imaging
(THz-S&I). |
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Terahertz Optoelectronics ~ Sakai, Kiyomi
The book presents recent and important developments in the field of terahertz radiation with a particular focus on pulsed terahertz radiation. Situated in the gap between electronics and optics, the terahertz frequency range of the electro-magnetic spectrum has long been neglected by scientists and engineers due to a lack of efficient and affordable terahertz sources and detectors. The advent of femtosecond lasers in the 1980s and photoconductive switches in 1984 have made the terahertz gap accessible, while at the same time advances in electronics and optics have made it narrower. Research activities in terahertz frequencies have risen dramatically since that time, funding has increased by a factor of 100 in the last decade. The reviews by leading experts are of interest to researchers and engineers as well as advanced students. |
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Intense Terahertz Excitation of Semiconductors ~ S. G.
Ganichev Product DescriptionIntense Terahertz Excitation of
Semiconductors presents the first comprehensive treatment of high-power
terahertz applications to semiconductors and low-dimensional semiconductor
structures. Terahertz properties of semiconductors are in the center of
scientific activities because of the need of high-speed electronics. This
research monograph bridges the gap between microwave physics and photonics.
It focuses on a core topic of semiconductor physics providing a full
description of the state of the art of the field. |
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Terahertz Frequency Detection and Identification of Materials and Objects ~ R.E. Miles Terahertz frequency sensing has
a unique part to play in the detection and identification of materials and
objects. This frequency range, corresponding to a wavelength of around 0.1
mm, can be used to identify materials from their molecular spectra and to
produce images of concealed objects. Terahertz spectra of drugs of abuse and
explosives presented by a number of the contributing authors show that the
presence of these materials can be detected in envelopes, packages and
through clothing. |
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