Del Mar Photonics

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Cadmium selenide (CdSe) is a solid, binary compound of cadmium and selenium. Common names for this compound are cadmium(II) selenide, cadmium selenide, and cadmoselite (a very rare mineral).
Cadmium selenide is a semiconducting material, but has yet to find many applications in manufacturing. This material is transparent to infra-red (IR) light, and has seen limited use in windows for instruments utilizing IR light.
Much current research on cadmium selenide has focused on nanoparticles. Researchers are concentrating on developing controlled syntheses of CdSe nanoparticles. In addition to synthesis, scientists are working to understand the properties of cadmium selenide, as well as apply these materials in useful ways. (Wikipedia)

1 CdSe powder 10-30 um (within 1 batch), 99.999 %, 10 kg.
2 CdSe, 6 X 4 X 2 mm, 6 X 4 // (0001), all sides polished 60/40, high resistivity (>/= 10^11 Ohm*cm), 11 pcs.
3 CdSe, random oriented, 10 X 10 X 0.5mm, 2 sides polished 60/40, high resistivity (>/= 10^11 Ohm*cm), 1 pc.
4 CdSe (10-10), 25X15X1 mm, 2 sides polished 60/40, low resistivity (< 1 Ohm*cm), 2 pc.
5 CdSe, Dia: 12.7 X 3.2 mm, <0001> // Dia: 12.7, 2 sides polished 60/40, high resistivity (>/= 10^11 Ohm*cm), 1 pc.
6 CdSe,Dia: 10 X 0.3 mm, // "c", polished 60/40, 5 pcs.
7 CdSe, 5X5X0.5 mm, (0001), all sides polished 60/40, high resistivity (>/= 10^11 Ohm*cm), 5 pcs.
8 CdSe, (0001), 10 X 10 X 0.5 mm, 1 side polished 60/40, 1 side grinded, low resistivity (< 1 Ohm*cm), 7 pcs.
9 CdSe, // "c", 10 X 10 X 1 mm, 2 sides polished 60/40, low resistivity (< 1 Ohm*cm), 5 pcs.
10 CdSe Dia: 5 X 5 mm, (0001), 2 sides polished 60/40. High resistivity (>/= 10^11 Ohm*cm), 4 pcs.
11 CdSe, 5 X 5 X 1 mm, (0001), all sides polished 60/40, low resistivity(< 1 Ohm*cm), 10 pcs.
12 CdSe, random oriented, 10 X 10 X 0.5 mm, 2 sides polished 60/40, low resistivity (< 1 Ohm*cm), 9 pcs.

1 CdTe (110), 10 X 8 X 3 mm, 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), n-type, 1 pc.
2 CdTe, 5 X 5 X 1.3 mm, (110) at 45deg to 5 X 5 mm, 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 7 pcs.
3 CdTe, 6 X 4 X 2 mm, 6 X 4 // (111), all sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 8 pcs.
4 CdTe, Dia: 6 X 8 mm, Dia: 6 //(111), high resistivity (>/= 10^6 Ohm*cm), 2 pcs.
5 CdTe, Dia: 15 X 2 mm, (110), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 3 pcs.
6 CdTe, 10 X 10 X 1 mm, random oriented, 2 sides inspection polished, high resistivity (>/= 10^6 Ohm*cm), 4 pcs.
7 CdTe, 7 X 5 X 0.5 mm, (110), 3 sides polished 60/40, high resistivity(>/= 10^6 Ohm*cm), 5 pcs.
8 CdTe, 30 X 2 X 1 mm, 30 X 2 // (110), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 3 pcs.
9 CdTe, Dia: 27 X 1.5 mm, (111), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm),1 pc.
10 CdTe, 30 X 3 X 3 mm, 30 X 3 // (111), 3 X 3 // (110), all sp 60/40, high resistivity (>/= 10^6 Ohm*cm), 2 pcs.
11 CdTe, 10 X 10 X 0.5 mm, (110), 1 side polished 60/40, 1 side fine grinded, low resistivity, p-type, 2 pcs.
12 CdTe, 10 X 10 X 0.2 mm, (110), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 1 pc.
13 CdTe, 10 X 5 X 1 mm, (110), 2 sides polished 60/40, high resistivity(>/= 10^6 Ohm*cm), 1 pc.
14 CdTe, 5 X 5 X 2 mm, (110), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 1 pc.
15 CdTe, 10 X 10 X 2 mm, (110)/(110)/(100), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 1 pcs.
16 CdTe, 10 X 10 X 0.5 mm, (100), 1 side polished 60/40, 1 side fine grinded, p-type, 3 pcs.
17 CdTe, 10 X 10 X 0.5 mm, random oriented, 1 side polished 60/40, 1 side fine grinded, p-type, 7 pcs.
18 CdTe, 10 X 10 X 0.5 mm, (100), 2 sides polished 60/40, p-type, 2 pcs.
19 CdTe, 10 X 10 X 0.5 mm, (110), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 1 pc.
20 CdTe, 10 X 10 X 0.5 mm, (111), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 1 pc.
21 CdTe, 10 X 10 X 1 mm, (100), 2 sides polished 60/40, high resistivity (>/= 10^6 Ohm*cm), 4 pcs.
22 CdTe, 20 X 20 X 1 mm, (110), 2 sides polished 40/20, high resistivity (>/= 10^6 Ohm*cm), 1 pc.

1 ZnTe 10 x 10 x 0.5 mm, (110), 2 sides polished 60/40, 3pcs.
2 ZnTe 10 x 8 x 0.8 mm, (110), 2 sides polished 60/40, 2pcs.
3 ZnTe 10 x 8 x 0.2 mm, (110), 2 sides polished 60/40, 1pc.
4. ZnTe 10 x 8 x 1 mm, (110), 2 sides polished 60/40, 2pcs.
5. ZnTe 10 x 10 x 0.4 mm, (110), 2 sides polished 60/40, 1pc.

Call  1-858-876-3133 for availability or email us to place your order while supplies last! Do not see waht you want in the list? E-mail for a custom quote!

References

Lev Isaakovich Berger (1996). Semiconductor materials. CRC Press. p. 202. ISBN 0849389127.
II-VI compound crystal growth, HPVB & HPVZM basics
a b Didenko, Yt; Suslick, Ks (Sep 2005). "Chemical aerosol flow synthesis of semiconductor nanoparticles.". Journal of the American Chemical Society 127 (35): 12196–7. doi:10.1021/ja054124t. ISSN 0002-7863. PMID 16131177.
Murray, C. B.; Norris, D. J.; Bawendi, M. G. (1993). "Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites". Journal of the American Chemical Society 115: 8706. doi:10.1021/ja00072a025.
T Ohtsuka, J Kawamata, Z Zhu, T Yao (1994). "p-type CdSe grown by molecular beam epitaxy using a nitrogen plasma source". Applied Physics Letters 65: 466. doi:10.1063/1.112338.
Ma, C; Ding, Y; Moore, D; Wang, X; Wang, Zl (Jan 2004). "Single-crystal CdSe nanosaws.". Journal of the American Chemical Society 126 (3): 708–9. doi:10.1021/ja0395644. ISSN 0002-7863. PMID 14733532.
Califano, Marco; Zunger, Alex; Franceschetti, Alberto (2004). "Direct carrier multiplication due to inverse Auger scattering in CdSe quantum dots". Applied Physics Letters 84: 2409. doi:10.1063/1.1690104.
Schaller, Richard D.; Petruska, Melissa A.; Klimov, Victor I. (2005). "Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals". Applied Physics Letters 87: 253102. doi:10.1063/1.2142092.
Hendry, E.; Koeberg, M; Wang, F; Zhang, H; De Mello Donegá, C; Vanmaekelbergh, D; Bonn, M (2006). "Direct Observation of Electron-to-Hole Energy Transfer in CdSe Quantum Dots". Physical Review Letters 96 (5): 057408. doi:10.1103/PhysRevLett.96.057408. PMID 16486988.
Nanotechnology Structures - Quantum Confinement
Colvin, V. L.; Schlamp, M. C.; Alivisatos, A. P. (1994). "Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer". Nature 370: 354. doi:10.1038/370354a0.
Chan, W. C.; Nie, S. M. (1998). "Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection". Science 281: 2016. doi:10.1126/science.281.5385.2016.
Bruchez, M.;Moronne, M.; Gin, P.; Weiss, S.; Alivisatos, A. P. (1998). Science 281: 2013.

[PDF] Preparation and Characterization of CdSe Single Crystal
by A Abd-El Mongy - Related articles
High quality of CdSe single crystal is grown from the melt. X-ray ... For CdSe crystal growth, the starting material was bought with labeled ...
Cadmium selenide - Wikipedia, the free encyclopedia
Cadmium selenide in its wurtzite crystal structure is an important II-VI semiconductor. As a semiconductor CdSe is an n-type semiconductor, ...
A tunable infrared parametric oscillator in a CdSe crystal - Elsevier
by AA Davydov - 1973 - Cited by 23 - Related articles
We have demonstrated an infrared singly resonant parametric tunable oscillator in a CdSe crystal. The oscillator was pumped at 2.36 μ (CaF2: Dy2+ laser) and ...
Cadmium selenide (CdSe) crystal structure, modifications
Cadmium selenide (CdSe) crystal structure, modifications. Madelung, O., Rössler, U., Schulz, M. (ed.). SpringerMaterials - The Landolt-Börnstein Database ...
Efficient cw lasing in a Cr2+:CdSe crystal
by VA Akimov - 2007 - Cited by 1 - Related articles
beam was focused on the Cr2‡ :CdSe crystal by spherical ... lasing in a Cr2‡ :CdSe crystal at 2.623 mm. The half-width of the laser spectrum was about 10 nm ...
 

 

 

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