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Cadmium selenide (CdSe) is a solid,
binary compound of cadmium and selenium. Common names for this compound are
cadmium(II) selenide, cadmium selenide, and cadmoselite (a very rare mineral).
Cadmium selenide is a semiconducting material, but has yet to find many
applications in manufacturing. This material is transparent to infra-red (IR)
light, and has seen limited use in windows for instruments utilizing IR light.
Much current research on cadmium selenide has focused on nanoparticles.
Researchers are concentrating on developing controlled syntheses of CdSe
nanoparticles. In addition to synthesis, scientists are working to understand
the properties of cadmium selenide, as well as apply these materials in useful
ways. (Wikipedia)
1 CdSe powder 10-30 um (within 1 batch), 99.999 %, 10 kg.
2 CdSe, 6 X 4 X 2 mm, 6 X 4 // (0001), all sides polished 60/40, high
resistivity (>/= 10^11 Ohm*cm), 11 pcs.
3 CdSe, random oriented, 10 X 10 X 0.5mm, 2 sides polished 60/40, high
resistivity (>/= 10^11 Ohm*cm), 1 pc.
4 CdSe (10-10), 25X15X1 mm, 2 sides polished 60/40, low resistivity (< 1
Ohm*cm), 2 pc.
5 CdSe, Dia: 12.7 X 3.2 mm, <0001> // Dia: 12.7, 2 sides polished 60/40, high
resistivity (>/= 10^11 Ohm*cm), 1 pc.
6 CdSe,Dia: 10 X 0.3 mm, // "c", polished 60/40, 5 pcs.
7 CdSe, 5X5X0.5 mm, (0001), all sides polished 60/40, high resistivity (>/=
10^11 Ohm*cm), 5 pcs.
8 CdSe, (0001), 10 X 10 X 0.5 mm, 1 side polished 60/40, 1 side grinded, low
resistivity (< 1 Ohm*cm), 7 pcs.
9 CdSe, // "c", 10 X 10 X 1 mm, 2 sides polished 60/40, low resistivity (< 1
Ohm*cm), 5 pcs.
10 CdSe Dia: 5 X 5 mm, (0001), 2 sides polished 60/40. High resistivity (>/=
10^11 Ohm*cm), 4 pcs.
11 CdSe, 5 X 5 X 1 mm, (0001), all sides polished 60/40, low resistivity(< 1
Ohm*cm), 10 pcs.
12 CdSe, random oriented, 10 X 10 X 0.5 mm, 2 sides polished 60/40, low
resistivity (< 1 Ohm*cm), 9 pcs.
1 CdTe (110), 10 X 8 X 3 mm, 2 sides polished 60/40, high resistivity (>/= 10^6
Ohm*cm), n-type, 1 pc.
2 CdTe, 5 X 5 X 1.3 mm, (110) at 45deg to 5 X 5 mm, 2 sides polished 60/40, high
resistivity (>/= 10^6 Ohm*cm), 7 pcs.
3 CdTe, 6 X 4 X 2 mm, 6 X 4 // (111), all sides polished 60/40, high resistivity
(>/= 10^6 Ohm*cm), 8 pcs.
4 CdTe, Dia: 6 X 8 mm, Dia: 6 //(111), high resistivity (>/= 10^6 Ohm*cm), 2
pcs.
5 CdTe, Dia: 15 X 2 mm, (110), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm), 3 pcs.
6 CdTe, 10 X 10 X 1 mm, random oriented, 2 sides inspection polished, high
resistivity (>/= 10^6 Ohm*cm), 4 pcs.
7 CdTe, 7 X 5 X 0.5 mm, (110), 3 sides polished 60/40, high resistivity(>/= 10^6
Ohm*cm), 5 pcs.
8 CdTe, 30 X 2 X 1 mm, 30 X 2 // (110), 2 sides polished 60/40, high resistivity
(>/= 10^6 Ohm*cm), 3 pcs.
9 CdTe, Dia: 27 X 1.5 mm, (111), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm),1 pc.
10 CdTe, 30 X 3 X 3 mm, 30 X 3 // (111), 3 X 3 // (110), all sp 60/40, high
resistivity (>/= 10^6 Ohm*cm), 2 pcs.
11 CdTe, 10 X 10 X 0.5 mm, (110), 1 side polished 60/40, 1 side fine grinded,
low resistivity, p-type, 2 pcs.
12 CdTe, 10 X 10 X 0.2 mm, (110), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm), 1 pc.
13 CdTe, 10 X 5 X 1 mm, (110), 2 sides polished 60/40, high resistivity(>/= 10^6
Ohm*cm), 1 pc.
14 CdTe, 5 X 5 X 2 mm, (110), 2 sides polished 60/40, high resistivity (>/= 10^6
Ohm*cm), 1 pc.
15 CdTe, 10 X 10 X 2 mm, (110)/(110)/(100), 2 sides polished 60/40, high
resistivity (>/= 10^6 Ohm*cm), 1 pcs.
16 CdTe, 10 X 10 X 0.5 mm, (100), 1 side polished 60/40, 1 side fine grinded,
p-type, 3 pcs.
17 CdTe, 10 X 10 X 0.5 mm, random oriented, 1 side polished 60/40, 1 side fine
grinded, p-type, 7 pcs.
18 CdTe, 10 X 10 X 0.5 mm, (100), 2 sides polished 60/40, p-type, 2 pcs.
19 CdTe, 10 X 10 X 0.5 mm, (110), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm), 1 pc.
20 CdTe, 10 X 10 X 0.5 mm, (111), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm), 1 pc.
21 CdTe, 10 X 10 X 1 mm, (100), 2 sides polished 60/40, high resistivity (>/=
10^6 Ohm*cm), 4 pcs.
22 CdTe, 20 X 20 X 1 mm, (110), 2 sides polished 40/20, high resistivity (>/=
10^6 Ohm*cm), 1 pc.
1 ZnTe 10 x 10 x 0.5 mm, (110), 2 sides polished 60/40, 3pcs.
2 ZnTe 10 x 8 x 0.8 mm, (110), 2 sides polished 60/40, 2pcs.
3 ZnTe 10 x 8 x 0.2 mm, (110), 2 sides polished 60/40, 1pc.
4. ZnTe 10 x 8 x 1 mm, (110), 2 sides polished 60/40, 2pcs.
5. ZnTe 10 x 10 x 0.4 mm, (110), 2 sides polished 60/40, 1pc.
Call 1-858-876-3133 for availability or email us to place your order while supplies last! Do not see waht you want in the list? E-mail for a custom quote!
References
Lev Isaakovich Berger (1996). Semiconductor materials. CRC Press. p. 202. ISBN
0849389127.
II-VI compound crystal growth, HPVB & HPVZM basics
a b Didenko, Yt; Suslick, Ks (Sep 2005). "Chemical aerosol flow synthesis of
semiconductor nanoparticles.". Journal of the American Chemical Society 127
(35): 12196–7. doi:10.1021/ja054124t. ISSN 0002-7863. PMID 16131177.
Murray, C. B.; Norris, D. J.; Bawendi, M. G. (1993). "Synthesis and
characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium)
semiconductor nanocrystallites". Journal of the American Chemical Society 115:
8706. doi:10.1021/ja00072a025.
T Ohtsuka, J Kawamata, Z Zhu, T Yao (1994). "p-type CdSe grown by molecular beam
epitaxy using a nitrogen plasma source". Applied Physics Letters 65: 466.
doi:10.1063/1.112338.
Ma, C; Ding, Y; Moore, D; Wang, X; Wang, Zl (Jan 2004). "Single-crystal CdSe
nanosaws.". Journal of the American Chemical Society 126 (3): 708–9.
doi:10.1021/ja0395644. ISSN 0002-7863. PMID 14733532.
Califano, Marco; Zunger, Alex; Franceschetti, Alberto (2004). "Direct carrier
multiplication due to inverse Auger scattering in CdSe quantum dots". Applied
Physics Letters 84: 2409. doi:10.1063/1.1690104.
Schaller, Richard D.; Petruska, Melissa A.; Klimov, Victor I. (2005). "Effect of
electronic structure on carrier multiplication efficiency: Comparative study of
PbSe and CdSe nanocrystals". Applied Physics Letters 87: 253102.
doi:10.1063/1.2142092.
Hendry, E.; Koeberg, M; Wang, F; Zhang, H; De Mello Donegá, C; Vanmaekelbergh,
D; Bonn, M (2006). "Direct Observation of Electron-to-Hole Energy Transfer in
CdSe Quantum Dots". Physical Review Letters 96 (5): 057408.
doi:10.1103/PhysRevLett.96.057408. PMID 16486988.
Nanotechnology Structures - Quantum Confinement
Colvin, V. L.; Schlamp, M. C.; Alivisatos, A. P. (1994). "Light-emitting diodes
made from cadmium selenide nanocrystals and a semiconducting polymer". Nature
370: 354. doi:10.1038/370354a0.
Chan, W. C.; Nie, S. M. (1998). "Quantum Dot Bioconjugates for Ultrasensitive
Nonisotopic Detection". Science 281: 2016. doi:10.1126/science.281.5385.2016.
Bruchez, M.;Moronne, M.; Gin, P.; Weiss, S.; Alivisatos, A. P. (1998). Science
281: 2013.
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