Del Mar Photonics - Newsletter Fall 2010 - Newsletter Winter 2010

Del Mar Photonics - LiNbO3 application note: LiNbO3 crystals for THz generation - request a quote

Del Mar Photonics supply variety of crystals for THz generation, including ZnTe, GaP, LiNbO3 and others. Below you find several examples of custom LiNbO3 crystals for THz generation.

 

Generation of THz radiation using bulk, periodically and aperiodically poled lithium niobate (pdf)

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Customer wrote: We want to generate THz wave in these crystals with femtosecond amplified laser beam @ 800nm.
We need to pump the crystal with tilted IR pulse to generate a THz beam in the orthogonal direction of the end side.

The following crystals are used:

Stoichiometric MgO(0.6%):LiNBO3 Y-cut 5 x 5 x 9.81 mm
5 x 5 mm^2 laser grade polished, with the end side cut at
63° and AR coating at 800nm on the both sides.
Type: prism
Material: Stoichiometric MgO(0.6%):LiNBO3
Dimensions: 5 mm x 5 mm x 9.81 mm
Coating: AR coating at 800nm on the both sides

Part number: MgO(0.6%): LiNbO3_5_5_9.83 - request a quote

 

sample certificate of conformity

Related Del Mar Photonics products:

Femtosecond Lasers and Amplified Systems - request a quote

Trestles femtosecond Ti:Sapphire laser
Trestles Finesse femtosecond Ti:Sapphire laser with integrated DPSS pump laser
Teahupoo Rider femtosecond amplified Ti:Sapphire laser
Mavericks femtosecond Cr:Forsterite laser
Tamarack femtosecond fiber laser (Er-doped fiber)
Buccaneer femtosecond OA fiber laser (Er-doped fiber) and SHG
Cannon Ultra-broadband light source
Tourmaline femtosecond Yt-doped fiber laser

more

Photoconductive THz antenna - LiNbO3 wafers and crystals - buy online or request a quote

 

PCA
PCA Photoconductive Antenna for terahertz waves


800 nm

990-1060 nm

1040 nm
800 nm
 
PCA with LT-GaAs absorber for laser excitation wavelengths λ ≤ 850 nm; optical absorption > 70%

 Model   Product Name+   Buy Now 
 PCA-44-16-16-800-u   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm  Buy Now 
 PCA-44-16-16-800-h   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm  Buy Now 
 PCA-44-34-100-800-u   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm  Buy Now 
 PCA-44-34-100-800-h   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm  Buy Now 
 PCA-44-06-10-800-u   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm  Buy Now 
 PCA-44-06-10-800-h   PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm  Buy Now 
 PCA-30-10-10-800-u   PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm  Buy Now 
 PCA-30-10-10-800-h   PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm  Buy Now 
 PCA-30-14-14-800-u   PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm  Buy Now 
 PCA-30-14-14-800-h   PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm  Buy Now 
Displaying 1 to 10 (of 10 products)
990-1060 nm
 
PCA with LT-GaAs absorber for laser excitation wavelengths λ = 990 .. 1060 nm; optical absorption ~ 50%

 Model   Product Name+   Buy Now 
 PCA-44-16-16-1030-h   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm  Buy Now 
 PCA-44-16-16-1030-u   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm  Buy Now 
 PCA-44-34-100-1030-u   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm  Buy Now 
 PCA-44-34-100-1030-h   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm  Buy Now 
 PCA-44-06-10-1030-u   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm  Buy Now 
 PCA-44-06-10-1030-h   PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm  Buy Now 
 PCA-30-10-10-1030-h   PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm  Buy Now 
 PCA-30-10-10-1030-u   PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm  Buy Now 
 PCA-30-14-14-1030-u   PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm  Buy Now 
 PCA-30-14-14-1030-h   PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm  Buy Now 
Displaying 1 to 10 (of 10 products)
1040 nm
 
PCA with LT-GaAs absorber for laser excitation wavelengths λ ~ 1040 nm; optical resonant design 97% absorption @ 1040 nm

 Model   Product Name+   Buy Now 
 PCA-44-16-16-1040-h   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm  Buy Now 
 PCA-44-16-16-1040-u   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm  Buy Now 
 PCA-44-34-100-1040-h   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm  Buy Now 
 PCA-44-34-100-1040-u   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm  Buy Now 
 PCA-44-06-10-1040-h   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm  Buy Now 
 PCA-44-06-10-1040-u   PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm  Buy Now 
 PCA-30-10-10-1040-u   PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm  Buy Now 
 PCA-30-10-10-1040-h   PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm  Buy Now 
 PCA-30-14-14-1040-h   PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm  Buy Now 
 PCA-30-14-14-1040-u   PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm  Buy Now 
Displaying 1 to 10 (of 10 products)  

 

iPCA
 
interdigital Photoconductive Antenna for terahertz waves

 Model   Product Name+   Buy Now 
 iPCAp-21-05-1000-800   iPCAp, 800 nm, 21x5x1000 microns  Buy Now 
 iPCAp-21-05-300-800-   iPCAp, 800 nm, 21x5x300 microns  Buy Now 
 iPCAs-21-05-1000-800   iPCAs, 800 nm, 21x5x1000 microns  Buy Now 
 iPCAs-21-05-300-800-   iPCAs, 800 nm, 21x5x300 microns  Buy Now 
Displaying 1 to 4 (of 4 products)

Del Mar Photonics - Samples for presentation during Optics and Photonics 2008

LiNbO3 wafers from stock

LiNbO3 optical grade

     
Shape Cut Dimensions Polish
     
Wafer XZ 3"x0.22mm Two sides
     
Wafer XZ 3"x0.5mm Two sides
     
Wafer XZ 100x1.0mm Two sides
     
Wafer Y 3"x0.6mm Two sides
     
Wafer YZ 100x1.0mm Two sides
     
Wafer YX 100x1.0mm Two sides
     
Wafer ZY 100x0.5mm Two sides
     
Wafer ZX 3"x1.0mm Two sides

LiNbO3 saw grade

Shape Cut Dimensions Polish
     
Wafer Y/127,85° 4"x0.5mm One side polished
     
Wafer Y/127,85° 100x1.0mm One side polished
     
Wafer Y/127,85° 100x0.22mm One side polished

Stoichiometric

Wafer Z 2"x1mm Two side polished
     
Wafer Z 2"x1mm Two side polished

MgO doped LiNbO3

MgO concentration Shape Cut Dimensions Polish
       
       
5% Wafer Z 2"x1.0 mm Two sides
       
5% Wafer Z 3"x1.0 mm  Two sides
       
5% Wafer Z 3"x0.5 mm  Two sides

 

LiNbO3 blocks and slabs

Block Y 40x10x1.5 mm Two sides polished
Block Y 48x15x1.5 mm Two sides polished
Block Y 48x30x1.5 mm Two sides polished
Slab Z 30x25x15 mm All sides polished
Slab Z 50x30x25 mm All sides polished
Slab Z 42x23x23 mm All sides polished
Slab Z 32x25x15 mm All sides polished

LiNbO3 boules are also available - e-mail us for details and quote
 

LiNbO3 optical grade
 
 Model   Product Name+   Buy Now 
 BL-LiNbO3-40-10-1.5   LiNbO3 block, Y-cut, 40x10x1.5 mm, 2 sides polished  Buy Now 
 BL-LiNbO3-48-15-1.5   LiNbO3 block, Y-cut, 48x15x1.5 mm, 2 sides polished  Buy Now 
 BL-LiNbO3-48-30-1.5   LiNbO3 block, Y-cut, 48x30x1.5 mm, 2 sides polished  Buy Now 
 CR-LiNbO3-10-1.5-32   LiNbO3 crystal, X,Y,Z, 10x1.5x32 mm  Buy Now 
 CR-LiNbO3-6-6-30   LiNbO3 crystal, X,Y,Z, 6x6x30 mm  Buy Now 
 CR-LiNbO3-9-9-25   LiNbO3 crystal, X,Y,Z, 9x9x25 mm  Buy Now 
 CR-LiNbO3-6-6-30   LiNbO3 crystal, X-cut, 6x6x30 mm  Buy Now 
 CR-LiNbO3-22-8-1   LiNbO3 crystal, Y+36 deg., 22x8x1 mm  Buy Now 
 CR-LiNbO3-6-6-30   LiNbO3 crystal, Z-cut, 6x6x30 mm  Buy Now 
 SL-LiNbO3-30-25-15   LiNbO3 slab, Z-cut, 30x25x15 mm, all sides polished  Buy Now 
 SL-LiNbO3-32-25-15   LiNbO3 slab, Z-cut, 32x25x15 mm, all sides polished  Buy Now 
 SL-LiNbO3-42-23-23   LiNbO3 slab, Z-cut, 42x23x23 mm, all sides polished  Buy Now 
 SL-LiNbO3-50-30-25   LiNbO3 slab, Z-cut, 50x30x25 mm, all sides polished  Buy Now 
 WA-LiNbO3-100-1   LiNbO3 wafer, X-cut, 100 mm x 1.0 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-3-0.22   LiNbO3 wafer, X-cut, 3"x0.22 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-3-0.5   LiNbO3 wafer, X-cut, 3"x0.5 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-100-1   LiNbO3 wafer, Y-cut, 100 mm x 1.0 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-3-0.6   LiNbO3 wafer, Y-cut, 3"x0.6 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-4-0.5   LiNbO3 wafer, YZ-cut, 4"x0.5 mm, stoichiometric  Buy Now 
 Model   Product Name+   Buy Now 
 WA-LiNbO3-100-1   LiNbO3 wafer, Z-cut, 100 mm x 1.0 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-2-1   LiNbO3 wafer, Z-cut, 2"x1.0 mm, stoichiometric  Buy Now 
 WA-LiNbO3-3-1   LiNbO3 wafer, Z-cut, 3"x1.0 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-3-2   LiNbO3 wafer, Z-cut, 3"x2.0 mm, 2 sides polished  Buy Now 
 WA-LiNbO3-100-0.5   LiNbO3 wafer, ø 100 mm, thickn. 0.5 mm  Buy Now 

 

LiNbO3 saw grade

 Model   Product Name+   Buy Now 
 WA-LiNbO3-100-0.22   LiNbO3 wafer, Y/127.85°-cut, 100 mm x 0.22 mm, one side polished  Buy Now 
 WA-LiNbO3-100-1   LiNbO3 wafer, Y/127.85°-cut, 100 mm x 1.0 mm, one side polished  Buy Now 
 WA-LiNbO3-4-0.5   LiNbO3 wafer, Y/127.85°-cut, 4"x0.5 mm, one side polished  Buy Now 
 WA-LiNbO3-3-0.5   LiNbO3 wafer, Y/36-cut, 3"x0.5 mm, one side (+) polished  Buy Now 
 WA-LiNbO3-3-0.5   LiNbO3 wafer, Y/36-cut, 3"x0.5 mm, one side (-) polished  Buy Now 

 

MgO-LiNbO3

 Model   Product Name+   Buy Now 
 WA-MgO-LiNbO3-3-1   MgO-LiNbO3 wafer, Y-cut, 3"x1.0 mm, two sides polished  Buy Now 
 WA-MgO-LiNbO3-2-1   MgO-LiNbO3 wafer, Z-cut, 2"x1.0 mm, two sides polished  Buy Now 
 WA-MgO-LiNbO3-3-1   MgO-LiNbO3 wafer, Z-cut, 3"x1.0 mm, two sides polished  Buy Now 

 

LiNbO3 related presentations during Optics and Photonics 2008


Modified sol-gel method for patterned lithium niobate thin film preparation (Poster Presentation)
Paper 7056-41 of Conference 7056
Authors(s): Armen R. Poghosyan, Institute for Physical Research (Armenia); Ruyan Guo, The Univ. of Texas at San Antonio (United States); Stepan G. Grigoryan, Aleksandr L. Manukyan, Eduard S. Vardanyan, Institute for Physical Research (Armenia)
Date: Tuesday, 12 August 2008
Time: 8:00 PM

For the first time patterned single crystal LiNbO3 thin films and waveguide devices have been successfully obtained by direct crystallization of precursor (dried gel) pattern. These precursor (dried gel) thin film patterns were prepared by two new related methods: from photosensitive sol-gel solution and by etching LiNbO3 precursor film using photoresist. Unlike crystalline LiNbO3, the precursor films are easily etched. When grown on a sapphire substrate and properly annealed, the patterned precursor material becomes single crystal. The developed method of production patterned lithium niobate thin films is the basis for future integrated optical devices.

Ultraviolet-infrared laser-induced domain inversion in MgO-doped congruent LiNbO3 and near stoichiometric LiTaO3 crystals (Paper Presentation)
Paper 7056-65 of Conference 7056
Authors(s): Ya'nan Zhi, Weijuan Qu, De'an Liu, Jianfeng Sun, Aimin Yan, Liren Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Date: Thursday, 14 August 2008
Time: 3:00 PM – 3:30 PM

Laser-induced domain inversion is a promising technique for domain engineering in LiNbO3 and LiTaO3. The ultraviolet-infrared laser induced domain inversions in MgO:LiNbO3 and near stoichiometric LiTaO3 (NSLT) crystals are investigated for the first time. The different reductions of nucleation field induced by the focused ultraviolet-infrared laser irradiation are systematically investigated in MgO:LiNbO3 crystals. The focused ultraviolet laser-induced ferroelectric domain inversion in NSLT is also investigated. The double threshold effects of laser-induced domain nucleation in both crystals are also observed. The results support the solid proofs and feasible schemes for the further investigation of laser-induced domain engineering in both crystals.

Generation of self-focused electron beam by pyroelectric/photogalvanic crystal accelerators (Poster Presentation)
Paper 7056-68 of Conference 7056
Authors(s): Nickolai V. Kukhtarev, Alabama A&M Univ. (United States)
Date: Tuesday, 12 August 2008
Time: 8:00 PM

N.Kukhtarev, T.Kukhtareva, G.Stargell
Phys.Dep. Alabama A&M University, Normal (Huntsville) Al 35762,
V.B. Samoilov, Institute of Physics, NAS, Kiev, Ukraine

We have observed generation of the electron beam by the pyroelectric crystal placed in the vacuum chamber. Different pyroelctric materials, Fe-doped LiNbO3 and L-alanine doped TGS crystals, were tested.
Heating/cooling cycles of the crystals in the vacuum (P~ 1-5 mTorr) produce uncompensated surface charges and strong electric field (~ 100kV/cm) on the polar crystal faces. These fringing fields ionize ambient gas and accelerate electrons to high energies (~100 KeV). For photosensitive LiNbO3 crystal electrical charging and generation of electrons may be done by laser illumination, via photogalvanic effect. These generated electrons can be detected by the fluorescent ZnS screen or by the X-rays produced by placing copper plate in the electron beam.

Domain switching of congruent lithium niobate crystals with surface modification (Poster Presentation)
Paper 7056-42 of Conference 7056
Authors(s): Armen R. Poghosyan, Eduard S. Vardanyan, Ira A. Ghambaryan, Institute for Physical Research (Armenia)
Date: Tuesday, 12 August 2008
Time: 8:00 PM

This paper presents electric field domain switching experiments carried out on congruent lithium niobate crystals with Li enriched surface layer. Li enrichment of congruent lithium niobate surface has been made by sample annealing in Li3NbO4 or LiNbO3:Li3NbO4 (1:1) powder during 0.5 or 1 h at 800oC. It was found that the Li enrichment of congruent lithium niobate surface layer allows to obtain a composition of surface layer very close to stoichiometry and has enabled domain inversion with the lower electric field than in congruent material.

Maximized diffraction efficiency for integrated volume grating instruments (Poster Presentation)
Paper 7056-53 of Conference 7056
Authors(s): Zhifang Chai, East China Normal Univ. (China)
Date: Tuesday, 12 August 2008
Time: 8:00 PM

In this paper the oscillatory characteristic of diffraction efficiency in doubly-doped LiNbO3 crystals is used to reduce the loss of light intensity in integrated instruments through considering the erased process by the sensitizing light during the next grating recorded. The results show that a nearly 100% diffraction can be obtained theoretically for each grating if the refractive-index change is big enough. The number of integrated volume grating depends on the cycle’s number of diffraction efficiency during recording process. In the last, the material parameters are optimized to obtain more oscillating cycles of diffraction efficiency during recording process.

Interferometric characterization of pyroelectrically activated micro-arrays of liquid lenses in lithium niobate crystals (Paper Presentation)
Paper 7064-3 of Conference 7064
Authors(s): Simonetta Grilli, Lisa Miccio, Veronica Vespini, Pietro Ferraro, Istituto Nazionale di Ottica Applicata (Italy)
Date: Wednesday, 13 August 2008
Time: 2:10 PM – 2:30 PM

This paper reports about the possibility to achieve lensing effect by a technique based on an open microfluidic system consisting of a tiny amount of appropriate liquid manipulated by the pyroelectric effect onto periodically poled LiNbO3 substrates. An electrowetting process is performed to actuate the liquid film by using the surface charges generated pyroelectrically. The configuration is electrode-less, thus improving the device flexibility and easiness of fabrication. The curvature of the liquid lenses has been characterized by an interferometric technique. The results showing the evolution of the lens curvature with the temperature variation will be presented and discussed.

Single-beam phase conjugation for lasers phase locking in free space and image formation (Paper Presentation)
Paper 7056-89 of Conference 7056
Authors(s): Nickolai V. Kukhtarev, Tatiana V. Kukhtareva, Michael J. Curley, Gregory Stargell, Alabama A&M Univ. (United States)
Date: Wednesday, 13 August 2008
Time: 3:00 PM – 3:20 PM

Single-beam phase conjugation (self-phase conjugation, or SPC) was observed in the ferroelectric crystal LiNbO3:Fe using CW HeNe laser (wavelength 632 nm power 10- 36 mW). Effective “out/in” reflection coefficient of phase conjugation (defined as the ratio the outpui phase-conjugated beam to the input laser beam measured before optical elements) was about 30%. Two He-Ne lasers were phase locked in free space using single-beam phase conjugation.
For some crystals efficient phase conjugation was followed by the simultaneous generation of Fabry-Perot modes. Phase locking of two HeNe lasers and imaging of the amplitude objects with help of self-phase conjugation was demonstrated.

Ultrahigh-sensitivity frequency-comb-referenced multiparametric sensors based on 1D photonic components (Paper Presentation)
Paper 7056-17 of Conference 7056
Authors(s): Paolo De Natale, Gianluca Gagliardi, Pasquale Maddaloni, Pietro Malara, Mario Salza, Pietro Ferraro, Istituto Nazionale di Ottica Applicata (Italy)
Date: Wednesday, 13 August 2008
Time: 4:20 PM – 4:40 PM

A novel generation of sensors of molecular concentration as well as of strain and temperature is reported. Such devices, based on 1-D photonic structures, rely on ultrastable laser sources referenced to a fiber-based optical-frequency-comb synthesizer. In one system, coherent radiation around 3 micron wavelength, produced by frequency mixing in a periodically-poled LiNbO3 crystal, is used for high-sensitivity spectroscopic detection of trace gases. The other device, based on fiber Bragg grating components, provides strain and temperature sensing with extremely high sensitivities. These sensors can be inserted in a multi-parametric network for real time and continuous monitoring of volcanic areas.

Decoding software for computer instructions stored as Fourier holograms into a LiNbO3:Fe crystal (Poster Presentation)
Paper 7072-52 of Conference 7072
Authors(s): Edmundo Rodriguez-Vázquez, Eduardo Tepichin-Rodriguez, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Date: Wednesday, 13 August 2008
Time: 5:30 PM

In this work, is described a special software developed for decode computer instructions; which are codified as information binary pages and are stored as Fourier holograms into a LiNbO3:Fe photorefractive crystal. A sequential program is conformed by these computer instructions, and it commands an electro-optical system; which emulates a reprogrammable digital circuit. To execute each computer instruction, the position of the crystal has to change; because of this the holograms output images are not focusing in the same output plane. This software solves the focusing problem with the implementation of a digital spatial filter and some special criteria.

Multi-beam coupling in doubly-doped photorefractive LiNbO3:Fe:Mn crystals (Poster Presentation)
Paper 7072-40 of Conference 7072
Authors(s): Cuixia Dai, Shanghai Univ. (China)
Date: Wednesday, 13 August 2008
Time: 5:30 PM
 

THz setups from Del Mar Photonics

Trestles Pacifica THz Time Domain Spectrometer is a modular tabletop system for scientific and industrial applications of pulsed THz radiation.

New THz band pass and long pass optical filters based on porous silicon and metal mesh technologies

Terahertz products from Del Mar Photonics

GaP crystals fro THz generation - ZnTe crystals for THz generation

 

Del Mar Photonics, Inc.
4119 Twilight Ridge
San Diego, CA 92130
tel: (858) 876-3133
fax: (858) 630-2376
Skype: delmarphotonics
sales@dmphotonics.com
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