Del Mar Photonics - Newsletter Fall 2010 - Newsletter Winter 2010
Del Mar Photonics - LiNbO3 application note: LiNbO3 crystals for THz generation - request a quote
Del Mar Photonics supply variety of crystals for THz generation, including ZnTe, GaP, LiNbO3 and others. Below you find several examples of custom LiNbO3 crystals for THz generation.
Generation of THz radiation using bulk, periodically and aperiodically poled lithium niobate (pdf)
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Customer wrote: We want to generate THz wave in these crystals with
femtosecond amplified laser beam @ 800nm.
We need to pump the crystal with tilted IR pulse to generate a THz beam in the
orthogonal direction of the end side.
The following crystals are used:
Stoichiometric MgO(0.6%):LiNBO3 Y-cut 5 x 5 x 9.81 mm
5 x 5 mm^2 laser grade polished, with the end side cut at
63° and AR coating at 800nm on the both sides.
Type: prism
Material: Stoichiometric MgO(0.6%):LiNBO3
Dimensions: 5 mm x 5 mm x 9.81 mm
Coating: AR coating at 800nm on the both sides
Part number: MgO(0.6%): LiNbO3_5_5_9.83 -
request a quote
sample certificate of conformity
Related Del Mar Photonics products:
Femtosecond Lasers and Amplified Systems - request a quote
Trestles femtosecond Ti:Sapphire laser
Trestles Finesse femtosecond
Ti:Sapphire laser with integrated DPSS pump laser
Teahupoo Rider femtosecond amplified
Ti:Sapphire laser
Mavericks femtosecond
Cr:Forsterite laser
Tamarack femtosecond fiber laser (Er-doped
fiber)
Buccaneer femtosecond OA fiber laser (Er-doped
fiber) and SHG
Cannon Ultra-broadband light source
Tourmaline femtosecond Yt-doped fiber laser
more
Photoconductive THz antenna - LiNbO3 wafers and crystals - buy online or request a quote
| PCA | |
Photoconductive Antenna for terahertz waves |
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| 800 nm | |
| PCA with LT-GaAs absorber for laser excitation wavelengths λ ≤ 850 nm; optical absorption > 70% | |
| Model | Product Name+ | Buy Now |
| PCA-44-16-16-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm |
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| PCA-44-16-16-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 16 µm |
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| PCA-44-34-100-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm |
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| PCA-44-34-100-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 34 µm |
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| PCA-44-06-10-800-u | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm |
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| PCA-44-06-10-800-h | PCA: resonance frequency 1 THz, λ = 800 nm, gap distance 6 µm |
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| PCA-30-10-10-800-u | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm |
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| PCA-30-10-10-800-h | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 10 µm |
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| PCA-30-14-14-800-u | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm |
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| PCA-30-14-14-800-h | PCA: resonance frequency 1.5 THz, λ = 800 nm, gap distance 14 µm |
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| Displaying 1 to 10 (of 10 products) |
| 990-1060 nm | |
| PCA with LT-GaAs absorber for laser excitation wavelengths λ = 990 .. 1060 nm; optical absorption ~ 50% | |
| Model | Product Name+ | Buy Now |
| PCA-44-16-16-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm |
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| PCA-44-16-16-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 16 µm |
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| PCA-44-34-100-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm |
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| PCA-44-34-100-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 34 µm |
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| PCA-44-06-10-1030-u | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm |
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| PCA-44-06-10-1030-h | PCA: resonance frequency 1 THz, λ = 990 .. 1060 nm, gap distance 6 µm |
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| PCA-30-10-10-1030-h | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm |
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| PCA-30-10-10-1030-u | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 10 µm |
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| PCA-30-14-14-1030-u | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm |
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| PCA-30-14-14-1030-h | PCA: resonance frequency 1.5 THz, λ = 990 .. 1060 nm, gap distance 14 µm |
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| Displaying 1 to 10 (of 10 products) |
| 1040 nm | |
| PCA with LT-GaAs absorber for laser excitation wavelengths λ ~ 1040 nm; optical resonant design 97% absorption @ 1040 nm | |
| Model | Product Name+ | Buy Now |
| PCA-44-16-16-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm |
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| PCA-44-16-16-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 16 µm |
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| PCA-44-34-100-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm |
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| PCA-44-34-100-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 34 µm |
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| PCA-44-06-10-1040-h | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm |
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| PCA-44-06-10-1040-u | PCA: resonance frequency 1 THz, λ ~ 1040 nm, gap distance 6 µm |
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| PCA-30-10-10-1040-u | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm |
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| PCA-30-10-10-1040-h | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 10 µm |
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| PCA-30-14-14-1040-h | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm |
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| PCA-30-14-14-1040-u | PCA: resonance frequency 1.5 THz, λ ~ 1040 nm, gap distance 14 µm |
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| Displaying 1 to 10 (of 10 products) |
| iPCA | |
| interdigital Photoconductive Antenna for terahertz waves | |
| Model | Product Name+ | Buy Now |
| iPCAp-21-05-1000-800 | iPCAp, 800 nm, 21x5x1000 microns |
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| iPCAp-21-05-300-800- | iPCAp, 800 nm, 21x5x300 microns |
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| iPCAs-21-05-1000-800 | iPCAs, 800 nm, 21x5x1000 microns |
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| iPCAs-21-05-300-800- | iPCAs, 800 nm, 21x5x300 microns |
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| Displaying 1 to 4 (of 4 products) |
Del Mar Photonics - Samples for presentation during Optics and Photonics 2008
LiNbO3 wafers from stock
| Shape | Cut | Dimensions | Polish |
| Wafer | XZ | 3"x0.22mm | Two sides |
| Wafer | XZ | 3"x0.5mm | Two sides |
| Wafer | XZ | 100x1.0mm | Two sides |
| Wafer | Y | 3"x0.6mm | Two sides |
| Wafer | YZ | 100x1.0mm | Two sides |
| Wafer | YX | 100x1.0mm | Two sides |
| Wafer | ZY | 100x0.5mm | Two sides |
| Wafer | ZX | 3"x1.0mm | Two sides |
LiNbO3 saw grade
| Shape | Cut | Dimensions | Polish |
| Wafer | Y/127,85° | 4"x0.5mm | One side polished |
| Wafer | Y/127,85° | 100x1.0mm | One side polished |
| Wafer | Y/127,85° | 100x0.22mm | One side polished |
Stoichiometric
| Wafer | Z | 2"x1mm | Two side polished |
| Wafer | Z | 2"x1mm | Two side polished |
MgO doped LiNbO3
| MgO concentration | Shape | Cut | Dimensions | Polish |
| 5% | Wafer | Z | 2"x1.0 mm | Two sides |
| 5% | Wafer | Z | 3"x1.0 mm | Two sides |
| 5% | Wafer | Z | 3"x0.5 mm | Two sides |
LiNbO3 blocks and slabs
Block Y 40x10x1.5 mm Two sides polished
Block Y 48x15x1.5 mm Two sides polished
Block Y 48x30x1.5 mm Two sides polished
Slab Z 30x25x15 mm All sides polished
Slab Z 50x30x25 mm All sides polished
Slab Z 42x23x23 mm All sides polished
Slab Z 32x25x15 mm All sides polished
LiNbO3 boules are also available -
e-mail us
for details and quote
| LiNbO3 optical grade |
| Model | Product Name+ | Buy Now |
| WA-LiNbO3-100-1 | LiNbO3 wafer, Z-cut, 100 mm x 1.0 mm, 2 sides polished |
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| WA-LiNbO3-2-1 | LiNbO3 wafer, Z-cut, 2"x1.0 mm, stoichiometric |
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| WA-LiNbO3-3-1 | LiNbO3 wafer, Z-cut, 3"x1.0 mm, 2 sides polished |
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| WA-LiNbO3-3-2 | LiNbO3 wafer, Z-cut, 3"x2.0 mm, 2 sides polished |
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| WA-LiNbO3-100-0.5 | LiNbO3 wafer, ø 100 mm, thickn. 0.5 mm |
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| LiNbO3 saw grade |
| Model | Product Name+ | Buy Now |
| WA-LiNbO3-100-0.22 | LiNbO3 wafer, Y/127.85°-cut, 100 mm x 0.22 mm, one side polished |
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| WA-LiNbO3-100-1 | LiNbO3 wafer, Y/127.85°-cut, 100 mm x 1.0 mm, one side polished |
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| WA-LiNbO3-4-0.5 | LiNbO3 wafer, Y/127.85°-cut, 4"x0.5 mm, one side polished |
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| WA-LiNbO3-3-0.5 | LiNbO3 wafer, Y/36-cut, 3"x0.5 mm, one side (+) polished |
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| WA-LiNbO3-3-0.5 | LiNbO3 wafer, Y/36-cut, 3"x0.5 mm, one side (-) polished |
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| MgO-LiNbO3 |
| Model | Product Name+ | Buy Now |
| WA-MgO-LiNbO3-3-1 | MgO-LiNbO3 wafer, Y-cut, 3"x1.0 mm, two sides polished |
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| WA-MgO-LiNbO3-2-1 | MgO-LiNbO3 wafer, Z-cut, 2"x1.0 mm, two sides polished |
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| WA-MgO-LiNbO3-3-1 | MgO-LiNbO3 wafer, Z-cut, 3"x1.0 mm, two sides polished |
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LiNbO3 related presentations during Optics and Photonics 2008
Modified sol-gel method for patterned lithium niobate thin film
preparation (Poster Presentation)
Paper 7056-41 of Conference 7056
Authors(s): Armen R. Poghosyan, Institute for Physical Research (Armenia); Ruyan
Guo, The Univ. of Texas at San Antonio (United States); Stepan G. Grigoryan,
Aleksandr L. Manukyan, Eduard S. Vardanyan, Institute for Physical Research
(Armenia)
Date: Tuesday, 12 August 2008
Time: 8:00 PM
For the first time patterned single crystal LiNbO3 thin films and waveguide
devices have been successfully obtained by direct crystallization of precursor
(dried gel) pattern. These precursor (dried gel) thin film patterns were
prepared by two new related methods: from photosensitive sol-gel solution and by
etching LiNbO3 precursor film using photoresist. Unlike crystalline LiNbO3, the
precursor films are easily etched. When grown on a sapphire substrate and
properly annealed, the patterned precursor material becomes single crystal. The
developed method of production patterned lithium niobate thin films is the basis
for future integrated optical devices.
Ultraviolet-infrared laser-induced domain inversion in MgO-doped
congruent LiNbO3 and near stoichiometric LiTaO3 crystals (Paper Presentation)
Paper 7056-65 of Conference 7056
Authors(s): Ya'nan Zhi, Weijuan Qu, De'an Liu, Jianfeng Sun, Aimin Yan, Liren
Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Date: Thursday, 14 August 2008
Time: 3:00 PM – 3:30 PM
Laser-induced domain inversion is a promising technique for domain engineering
in LiNbO3 and LiTaO3. The ultraviolet-infrared laser induced domain inversions
in MgO:LiNbO3 and near stoichiometric LiTaO3 (NSLT) crystals are investigated
for the first time. The different reductions of nucleation field induced by the
focused ultraviolet-infrared laser irradiation are systematically investigated
in MgO:LiNbO3 crystals. The focused ultraviolet laser-induced ferroelectric
domain inversion in NSLT is also investigated. The double threshold effects of
laser-induced domain nucleation in both crystals are also observed. The results
support the solid proofs and feasible schemes for the further investigation of
laser-induced domain engineering in both crystals.
Generation of self-focused electron beam by pyroelectric/photogalvanic
crystal accelerators (Poster Presentation)
Paper 7056-68 of Conference 7056
Authors(s): Nickolai V. Kukhtarev, Alabama A&M Univ. (United States)
Date: Tuesday, 12 August 2008
Time: 8:00 PM
N.Kukhtarev, T.Kukhtareva, G.Stargell
Phys.Dep. Alabama A&M University, Normal (Huntsville) Al 35762,
V.B. Samoilov, Institute of Physics, NAS, Kiev, Ukraine
We have observed generation of the electron beam by the pyroelectric crystal
placed in the vacuum chamber. Different pyroelctric materials, Fe-doped LiNbO3
and L-alanine doped TGS crystals, were tested.
Heating/cooling cycles of the crystals in the vacuum (P~ 1-5 mTorr) produce
uncompensated surface charges and strong electric field (~ 100kV/cm) on the
polar crystal faces. These fringing fields ionize ambient gas and accelerate
electrons to high energies (~100 KeV). For photosensitive LiNbO3 crystal
electrical charging and generation of electrons may be done by laser
illumination, via photogalvanic effect. These generated electrons can be
detected by the fluorescent ZnS screen or by the X-rays produced by placing
copper plate in the electron beam.
Domain switching of congruent lithium niobate crystals with
surface modification (Poster Presentation)
Paper 7056-42 of Conference 7056
Authors(s): Armen R. Poghosyan, Eduard S. Vardanyan, Ira A. Ghambaryan,
Institute for Physical Research (Armenia)
Date: Tuesday, 12 August 2008
Time: 8:00 PM
This paper presents electric field domain switching experiments carried out on
congruent lithium niobate crystals with Li enriched surface layer. Li enrichment
of congruent lithium niobate surface has been made by sample annealing in
Li3NbO4 or LiNbO3:Li3NbO4 (1:1) powder during 0.5 or 1 h at 800oC. It was found
that the Li enrichment of congruent lithium niobate surface layer allows to
obtain a composition of surface layer very close to stoichiometry and has
enabled domain inversion with the lower electric field than in congruent
material.
Maximized diffraction efficiency for integrated volume grating
instruments (Poster Presentation)
Paper 7056-53 of Conference 7056
Authors(s): Zhifang Chai, East China Normal Univ. (China)
Date: Tuesday, 12 August 2008
Time: 8:00 PM
In this paper the oscillatory characteristic of diffraction efficiency in
doubly-doped LiNbO3 crystals is used to reduce the loss of light intensity in
integrated instruments through considering the erased process by the sensitizing
light during the next grating recorded. The results show that a nearly 100%
diffraction can be obtained theoretically for each grating if the
refractive-index change is big enough. The number of integrated volume grating
depends on the cycle’s number of diffraction efficiency during recording
process. In the last, the material parameters are optimized to obtain more
oscillating cycles of diffraction efficiency during recording process.
Interferometric characterization of pyroelectrically activated
micro-arrays of liquid lenses in lithium niobate crystals (Paper Presentation)
Paper 7064-3 of Conference 7064
Authors(s): Simonetta Grilli, Lisa Miccio, Veronica Vespini, Pietro Ferraro,
Istituto Nazionale di Ottica Applicata (Italy)
Date: Wednesday, 13 August 2008
Time: 2:10 PM – 2:30 PM
This paper reports about the possibility to achieve lensing effect by a
technique based on an open microfluidic system consisting of a tiny amount of
appropriate liquid manipulated by the pyroelectric effect onto periodically
poled LiNbO3 substrates. An electrowetting process is performed to actuate the
liquid film by using the surface charges generated pyroelectrically. The
configuration is electrode-less, thus improving the device flexibility and
easiness of fabrication. The curvature of the liquid lenses has been
characterized by an interferometric technique. The results showing the evolution
of the lens curvature with the temperature variation will be presented and
discussed.
Single-beam phase conjugation for lasers phase locking in free
space and image formation (Paper Presentation)
Paper 7056-89 of Conference 7056
Authors(s): Nickolai V. Kukhtarev, Tatiana V. Kukhtareva, Michael J. Curley,
Gregory Stargell, Alabama A&M Univ. (United States)
Date: Wednesday, 13 August 2008
Time: 3:00 PM – 3:20 PM
Single-beam phase conjugation (self-phase conjugation, or SPC) was observed in
the ferroelectric crystal LiNbO3:Fe using CW HeNe laser (wavelength 632 nm power
10- 36 mW). Effective “out/in” reflection coefficient of phase conjugation
(defined as the ratio the outpui phase-conjugated beam to the input laser beam
measured before optical elements) was about 30%. Two He-Ne lasers were phase
locked in free space using single-beam phase conjugation.
For some crystals efficient phase conjugation was followed by the simultaneous
generation of Fabry-Perot modes. Phase locking of two HeNe lasers and imaging of
the amplitude objects with help of self-phase conjugation was demonstrated.
Ultrahigh-sensitivity frequency-comb-referenced multiparametric
sensors based on 1D photonic components (Paper Presentation)
Paper 7056-17 of Conference 7056
Authors(s): Paolo De Natale, Gianluca Gagliardi, Pasquale Maddaloni, Pietro
Malara, Mario Salza, Pietro Ferraro, Istituto Nazionale di Ottica Applicata
(Italy)
Date: Wednesday, 13 August 2008
Time: 4:20 PM – 4:40 PM
A novel generation of sensors of molecular concentration as well as of strain
and temperature is reported. Such devices, based on 1-D photonic structures,
rely on ultrastable laser sources referenced to a fiber-based
optical-frequency-comb synthesizer. In one system, coherent radiation around 3
micron wavelength, produced by frequency mixing in a periodically-poled LiNbO3
crystal, is used for high-sensitivity spectroscopic detection of trace gases.
The other device, based on fiber Bragg grating components, provides strain and
temperature sensing with extremely high sensitivities. These sensors can be
inserted in a multi-parametric network for real time and continuous monitoring
of volcanic areas.
Decoding software for computer instructions stored as Fourier
holograms into a LiNbO3:Fe crystal (Poster Presentation)
Paper 7072-52 of Conference 7072
Authors(s): Edmundo Rodriguez-Vázquez, Eduardo Tepichin-Rodriguez, Instituto
Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Date: Wednesday, 13 August 2008
Time: 5:30 PM
In this work, is described a special software developed for decode computer
instructions; which are codified as information binary pages and are stored as
Fourier holograms into a LiNbO3:Fe photorefractive crystal. A sequential program
is conformed by these computer instructions, and it commands an electro-optical
system; which emulates a reprogrammable digital circuit. To execute each
computer instruction, the position of the crystal has to change; because of this
the holograms output images are not focusing in the same output plane. This
software solves the focusing problem with the implementation of a digital
spatial filter and some special criteria.
Multi-beam coupling in doubly-doped photorefractive LiNbO3:Fe:Mn
crystals (Poster Presentation)
Paper 7072-40 of Conference 7072
Authors(s): Cuixia Dai, Shanghai Univ. (China)
Date: Wednesday, 13 August 2008
Time: 5:30 PM
THz setups from Del Mar Photonics
New THz band pass and long pass optical filters based on porous silicon and metal mesh technologies
Terahertz products from Del Mar Photonics
GaP crystals fro THz generation - ZnTe crystals for THz generation
Del Mar Photonics, Inc.
4119 Twilight Ridge
San Diego, CA 92130
tel: (858) 876-3133
fax: (858) 630-2376
Skype: delmarphotonics
sales@dmphotonics.com
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