Ultrafast Electron Dynamics in GaAs and InP Studied by Time-Resolved Terahertz Emission Spectroscopy
Toshiaki HATTORI , Satoshi ARAI and Keiji TUKAMOTO
Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan
(Received June 14, 2004; accepted August 6, 2004; published November 10, 2004)
We studied the ultrafast dynamics of electrons generated by tunable femtosecond
optical pulses having positive and negative
excess energies in GaAs and InP by observing the temporal waveform of THz
radiation emitted from biased photoconductive
antennas. Sub-picosecond intraband relaxation was observed when the excess
energy was positive. When excited by optical
pulses having negative excess energies, it was observed that the THz waveform
had a picosecond decay, which was attributed
to the transition from the Urbach state to the free carrier state of electrons
on the picosecond time scale. This dynamical
behavior was found to be very sensitive to the applied electric field in the
range of several kV/cm. The largest THz signal was
obtained by pumping the emitter at the band-gap energy.
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THz crystals
ZnTe | |
Model | Product Name+ | Buy Now |
CR-ZnTe-10-0.5 | ZnTe crystal, 10x10x0.5 mm, 110-cut | |
CR-ZnTe-10-10-1 | ZnTe crystal, 10x10x1 mm, 110-cut | |
CR-ZnTe-20-20-0.2 | ZnTe crystal, 20x20x0.2 mm, 110-cut | |
CR-ZnTe-6-6-0.2 | ZnTe crystal, 6x6x0.2 mm, 110-cut |
|
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Model | Product Name+ | Buy Now |
CR- |
GaP crystal, 100-cut, 10x10x0.5 mm | |
CR- |
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GaP crystal, 110-cut, 10x10x0.2 mm | |
CR- |
GaP crystal, 110-cut, 10x10x0.3 mm | |
CR- |
GaP crystal, 110-cut, 10x10x0.5 mm | |
CR- |
GaP crystal, 110-cut, 10x10x1 mm | |
CR- |
GaP crystal, 110-cut, 10x10x4 mm | |
CR- |
GaP crystal, 110-cut, 10x10x5 mm | |
CR- |
GaP crystal, 110-cut, 10x8x0.15 mm | |
CR- |
GaP crystal, 110-cut, 19x19x0.2 mm | |
CR- |
GaP crystal, 110-cut, 19x21x0.3 mm | |
CR- |
GaP crystal, 110-cut, 5x5x0.1 mm | |
CR- |
GaP crystal, 110-cut, 5x5x0.25 mm | |
CR- |
GaP crystal, 110-cut, 5x5x0.85 mm | |
CR- |
GaP crystal, 110-cut, 8x8x0.2 mm |
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